[introduction]As industry 4, net of couplet of industrial other people (of IIoT) and 5G telephone technology gain ground, the electronic equipment deploy that makes more and more more complex was in in the environment that enters badlier, harder. This conduces to mix in sensor of interface of industrial robot, IO-Link, industry IIoT equipment, but controller of process designing logic (PLC) and aether net power supply (undertake in the application such as PoE) but reduplicative, determinism is electrostatic discharge (ESD) and electric cross stress (EOS) event protection. The transient state that these application need to satisfy IEC61000 standard protects a requirement. Although transient state voltage is restrained (the requirement that TVS) diode can satisfy design personnel well, but more and more application need are more affirmatory, linearer, more compact protect with more reliable ESD and EOS.

As industry 4, net of couplet of industrial other people (of IIoT) and 5G telephone technology gain ground, the electronic equipment deploy that makes more and more more complex was in in the environment that enters badlier, harder. This conduces to mix in sensor of interface of industrial robot, IO-Link, industry IIoT equipment, but controller of process designing logic (PLC) and aether net power supply (undertake in the application such as PoE) but reduplicative, determinism is electrostatic discharge (ESD) and electric cross stress (EOS) event protection. The transient state that these application need to satisfy IEC61000 standard protects a requirement. Although transient state voltage is restrained (the requirement that TVS) diode can satisfy design personnel well, but more and more application need are more affirmatory, linearer, more compact protect with more reliable ESD and EOS.

To satisfy these performance that improve ceaselessly and requirement of over all dimension, can use transient state billabong to restrain implement (TDS) parts of an apparatus. This kind of parts of an apparatus has outstanding Qian at the same time, linear and temperature stability, can obtain have assuring performance level more. Diode of TVS of unlike of TDS parts of an apparatus in that way dissipation surge energy, divert this kind of energy the ground however. Compare with TVS substitute, TDS won’t dissipation energy, its dimension is accordingly OK smaller, this conduces to contractible solution dimension. In addition, the clamp of TDS parts of an apparatus voltage will be lower than TVS diode 30% , because this reduced electric stress of the system, raised dependability.

How does the article work introductory TDS parts of an apparatus the advantage that reachs its to be brought to key application. Next, withSemtechTDS parts of an apparatus is a PCB distribution directory that undertake introductory and gives out to apply these parts of an apparatus successfully.

How does TDS surge protector work

Transistor of effect of surge level field (FET) is the main protection element in TDS parts of an apparatus. Should produce EOS event and the puncture voltage that transient state voltage exceeds circuit of compositive and accurate trigger (when VBR) , drive circuit is activationed, field effect canal guides, transient state energy (IPP) is conducted to the ground (pursue 1) .

Graph 1: In TDS parts of an apparatus, should detect when EOS incident, accurate trigger circuit (left) meeting activation FET is pressed accuse switch (right) , aux will be able to measures aiguille (IPP) transfers directly to the ground (picture origin: Semtech)

Increase as pulse electric current to IPP, of FET guide electrify block (RDS(ON)) becomes Europe of a few fine long hair (M Ω ) , clamp voltage (VC) and the VBR that hit hair circuit are almost identical. Accordingly, the VC of TDS parts of an apparatus is constant almost inside IPP limits. The Qian in this and TVS device motive is different, latter and foregone:

Among them Rdyn is dynamic resistor.

In TVS equipment, rdyn cost is fixed, make Qian voltage increases in the as the addition of IPP linear inside limits of rated electric current. To TDS parts of an apparatus, VC is stable inside working temperature and IPP limits, realized conclusive EOS to protect thereby (pursue 2) .

Graph 2: To be likeTDS2211P(solid line part) parts of an apparatus of TDS of and so on, clamp voltage keeps constant inside the limits of temperature and Ipp, provide affirmatory EOS protection thereby. (picture origin: Semtech)

The VC of TDS parts of an apparatus is relatively inferior, the electric stress that is gotten not only by protective parts of an apparatus accordingly is inferior also, and raised dependability (pursue 3) .

Graph 3: The low VC of TDS parts of an apparatus (express with VClamp here, green curve) will raise dependability through reducing the electric stress that suffers place of protective parts of an apparatus. (picture origin: Semtech)

The function of TDS parts of an apparatus supports the systematic design that satisfies many standards requirement: The abrupt of standard of the requirement of ESD immunity to interference of IEC 61000-4-2 standard, IEC 61000-4-4 is sent / electric and fast twinkling changes (requirement of EFT) immunity to interference, and the requirement of surge immunity to interference of IEC 61000-4-5 standard. This makes the application that TDS parts of an apparatus suits a lot of harsh environments to fall. Later development uses those who introduce TDS example, the 22V TDS parts of an apparatus or appliance that includes to be used at protecting laden switch, suit to protect IO-Link to send and receive implement 33V TDS parts of an apparatus, and the parts of an apparatus of 58 V TDS that can be used at protecting PoE plant.

Protect laden switch

Use 22 V TDS2211P is OK power transmission of safe industries equipment, robot, long-range appearance, USB (input of fuse of the laden switch in PD) and IIoT equipment, electron avoids the effect that suffers EOS incident. The EOS of this TDS parts of an apparatus protects grade to include:

• Contact and grade of airy ESD withstand voltage are ± 30kV, accord with IEC61000-4-2 standard requirement
• The rated electric current of peak value pulse is S) of μ of 40A (tp = 8/20, accord with requirement of IEC 61000-4-5 standard; ± 1kV (resistor of S of μ of Tp = 1.2/50, billabong (Ω of RS) = 42) , accord with requirement of IEC 61000-4-5 standard, apply to asymmetrical circuit
• EFT withstand voltage is ± 4 KV (100kHz and 5kHz, 5/50ns) , accord with IEC 61000-4-4 standard

When using this kind of configuration, TDS2211P can protect downstream parts of an apparatus to avoid the effect that suffers be struck by lightning, ESD and other EOS incident, the damage threshold value that this parts of an apparatus still can hold VC to open FET of switch of the central Shaanxi plain under load (pursue 4) .

Graph 4: TDS2211P can be used at protecting laden switch (HS2950P) and downstream parts of an apparatus avoid the effect that suffers thunder, ESD and other EOS incident. (picture origin: Semtech)

I0-Link protection

Besides the common ESD that happens in industrial environment and EOS danger, send and receive I0-Link implement insert I0-Link advocate equipment or from pulling out on these equipment, may encounter the voltage aiguille of thousands of bend over. Use at protecting I0-Link to send and receive normally implement TVS diode can complement with TDS parts of an apparatus, in order to promote protection property. In typical circuit protection application, 115% what what use the rating of parts of an apparatus to be input power source at least, because this applies to the 24V of I0-Link and so on, choose pictureTDS3311P It is appropriate that such TDS 33V protects parts of an apparatus. The main norms of TDS3311P is as follows:

• Contact and airy ESD withstand voltage are ± 30kV, accord with the requirement of IEC61000-4-2 standard

• Ability of electric current of peak value pulse is S) of μ of 35A (tp = 8/20, and Ω of S of μ of 1kV (tp = 1.2/50, RS = 42) , those who accord with IEC61000-4-5 standard is asymmetrical circuit requirement

• The abrupt that accords with IEC61000-4-4 standard is sent / requirement of EFT immunity to interference

Have two kinds of common I0-Link port configuration, namely 3 bring foot and 4 cite a base. These two kinds of configuration need to have different protective plan a bit. Below these two kinds of circumstances, TDS parts of an apparatus can complement on circuitry of VBUS (L+ (24V))μ Clamp3671P TVS diode, protect in order to offer reversal sex (graph 5) .

Graph 5: Use TDS parts of an apparatus (green is rectangular) be aimed at port of the 3 I0-Link that cite a base (coping) with port of the 4 I0-Link that cite a base (bottom) the comparison that ESD protects. (picture origin: Semtech)

Below the 3 circumstances that cite a base, need 3 TDS parts of an apparatus. If need, can pass two face-to-face TDS3311P will provide two-way protection. Below the 4 circumstances that cite a base, of I0-Link port all 4 sutural answer to all can bear to enjoying surge. Of connector every pairs are brought need to have a test between the foot, in order to ensure I0-Link is sent and receive implement surge protects property, should send according to abrupt of IEC 61000-4-2 ESD, IEC 61000-4-4 / the requirement level of EFT and IEC 61000-4-5 surge has a test.

PoE protection

PoE protects plan to must consider EOS event may be in all model (opposite at the ground) or poor cent (the string is right line) circumstance. The power supply voltage of PoE is 48V, because this resemblesTDS5801PSuch 58V TDS parts of an apparatus can be used at EOS protection is being provided in RJ-45 connector a side. The norms of TDS5801P is as follows:

• ESD withstand voltage: ± 15kV (contact) with ± 20kV (air) , accord with the requirement of IEC61000-4-2 standard
• Ability of electric current of peak value pulse: S) of μ of 20A (tp = 8/20, Ω of S of μ of 1kV (tp = 1.2/50, RS = 42) , accord with IEC61000-4-5 standard requirement

• According to the requirement of IEC61000-4-4, EFT withstand voltage is ± 4kV (100kHz and 5kHz, 5/50ns)

The join of central take a percentage of a deal that passes transformer will offer the power source in PoE system. PD (RJ-45) end must protect mode A at the same time (be opposite through data 1 and 2, data is right 3 and 6 provide power source) with mode B (through citing a base 4 and cite a base 5 and cite a base 7 with cite a base 8 carry, because this needs two pairs of TDS5801P,will come true cross connective of central take a percentage of a deal two-way protection (pursue 6) .

Graph 6: Carry pair of back TDS parts of an apparatus on the back (green, TDS5801P) two-way protection is provided in PoE system, prevent EOS incident. (picture origin: Semtech)

Transformer was offerred in all modular segregation, but cannot provide protection of the surge that need branch. In differential EOS incident, the transformer winding of circuit side is charged, energy changes side, till surge end or transformer saturation. The TDS parts of an apparatus of PD side can use the layer of aether net physics that is located in transformer (the parts of an apparatus of protection of 4 RClamp3361P ESD of PHY) side has complement, prevent incident of the EOS that need branch.

TDS parts of an apparatus

SurgeSwitch TDS parts of an apparatus offerred a variety of working voltage alternatives to design staff, include 22 V (TDS2211P) , 30V(TDS3011P) , 33V (TDS3311P) , 40V(TDS4001P) , 45V(TDS4501P) with 58V (TDS5801P) (watch 1) . These parts of an apparatus satisfy the requirement of IEC61000 standard, the system that can be used at those to move in abominable 5G phone and industrial environment.

Express 1: The rated voltage of SurgeSwitch parts of an apparatus comes for 22V 58V, can satisfy a lot of application requirements. (picture origin: Semtech)

As a result of parts of an apparatus of sex of dissipation of dispute of TDS parts of an apparatus, divert surge energy the ground directly through low impedance method however, because this is OK those who use 1.6 X 1.6 X 0.55mm is small-sized in enclosing, protect the SMA that parts of an apparatus uses normally and SMB to enclose than other surge, can save circuit board space significantly. The DFN that has 6 to cite a base is enclosed include 3 inputs to bring what the foot uses at diverting surge energy the ground with 3 to cite a base (pursue 7) .

Graph 7: TDS parts of an apparatus uses the DFN of 1.6 X 1.6 X 0.55mm to enclose, have 6 lead (right) ; 1, 2, 3 ground connection that cite a base, and 4, 5, 6 bring a foot to use as EOS/ESD protects an input. (picture origin: Semtech)

Directory of circuit board distribution

Should be in on circuit board when parts of an apparatus of installation SurgeSwitch TDS, its are all ground connection cites a base (1, 2 and 3) must receive repeatedly same print a line to go up, all inputs cite a base (4, 5 and 6) also must receive repeatedly same print a line, in order to obtain capability of the biggest surge electric current. If ground wire is located in the different layer of circuit board, intense proposal uses many via and ground level connection (pursue 8) . According to these directory of PC board distribution, utmost ground reduces parasitism inductance and can optimize function of parts of an apparatus. In addition, surgeSwitch TDS parts of an apparatus should stand by the connector that gets protection or parts of an apparatus as far as possible. This meeting falls instantaneous energy and the coupling that print a line to lowest, this is in incident of EOS of fast rise time especially important. As a result of TDS parts of an apparatus won’t dissipation any energy, because this does not need,heat conduction mat is installed to conduct heat energy in lower part of parts of an apparatus.

Graph 8: When the different layer that is located in circuit board when ground connection plane, to obtain optimum behavior, the proposal uses many via to have link. (picture origin: Semtech)

Article brief summary

For the design personnel of the industry that works below harsh environment to the design and 5G phone equipment, can use TDS parts of an apparatus, in order to provide reliable, affirmatory ESD and EOS event protection. The VC of TDS parts of an apparatus is relatively inferior, will raise systematic dependability through reducing the electric stress of yuan of parts of an apparatus. These parts of an apparatus accord with the transient state of IEC61000 standard to protect a requirement, 22V comes 58V voltage limits, can satisfy the requirement of specific application. Bulk of TDS parts of an apparatus is cabinet, conduce to the size that reduces integral solution, but design personnel needs to abide by a few simple PC board layout requirement, in order to develop the biggest property of TDS parts of an apparatus.

(origin: Get nimble electron DigiKey, author: Jeff Shepard)

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