Point contact diode is to use a very fine tinsel to be pressed in bright and clean semiconductor chip surface, connect with pulse electric current, make touch filar one aspect of the matter and chip firm agglomeration is together, form ” of knot of a “PN. Because be point contact, allow to carry lesser electricity only (do not exceed a few milliampere) , apply to circuit of high frequency small electric current, the demodulation that is like a radio. The area of “PN knot ” of surface contact diode is larger, allow to carry bigger electricity (a few how to arrive a few how) , in the circuit of “ commutate ” that basically is used at alternating alternating current into dc. Plane diode is a kind of tailor-made silicon detector, it can carry bigger electricity not only, and function is stable and reliable, multi-purpose in switch, pulse and high frequency circuit.

 

The classification of crystal diode

 

One, classify according to construction

　　

Support PN writtens guarantee and semiconductor diode basically works. As impartible as PN knot cut point contact with Xiaoteji model, inside the range that also is included general diode. Include these two kinds of type inside, build the characteristic of the face according to PN structure, classify crystal diode as follows:

 

Point contact diode

　　

Point contact diode is press on the odd chip of germanium or silicon material after hitting needle of a metal, law of repass electric current and form. Accordingly, the static capacitance that its PN writtens guarantee is small, apply to high frequency circuit. But, with the face knot photograph is compared, point contact diode is being differred to character and retrorse character, accordingly, cannot use at big electric current and commutate. Because construction is simple, so low-cost. The demodulation to small signal, commutate, modulation, mixing and be restricted wait for general use and character, it is the type with applied wider range.

 

Key diode

　　

Key diode is on the odd chip of germanium or silicon frit is received or silver-colored filament and form. Its character interpose is mixed at point contact diode between alloy diode. Compare with point contact photograph, although the PN of key diode writtens guarantee capacitance has a bit,increase, but to character particularly admirable. Make switch use more, also be applied at demodulation and power source commutate sometimes (do not be more than 50mA) . In key diode, frit receives gold-rimmed diode to be called Jin Jian sometimes model, the diode that frit receives silver-colored silk is called sometimes Yin Jian.

 

Alloy diode

　　

On the odd chip of N germanium or silicon, the method that waits for a metal through alloy indium, aluminium makes what PN writtens guarantee and form. to voltage drop small, comfortable at commutate of big electric current. Because its PN knot is retrorse Shi Jing capacitance is big, so unwell at high frequency demodulation and high frequency commutate.

 

Diffuse model diode

　　

In gas of the P of high temperature impurity, heat the odd chip of N germanium or silicon, make one of odd chip surface becomes P model, with knot of this law PN. Because PN writtens guarantee to voltage drop small, apply to commutate of big electric current. Recently, the main trend that uses commutator of big electric current already diffused to silicon by silicon alloy move model.

 

Mesa diode

 

The making method that PN writtens guarantee although with diffuse model identical, but, retain PN knot and its necessary share only, corrode needless part with medicines and chemical reagents. Part of its the rest presents a mesa look, get a name consequently. The mesa of primary production, it is half-and-half conductor material is used diffuse law and make. Accordingly, plant this again mesa call diffuse mesa. To this one type, it seems that the product model that commutate of big electric current uses is very few, and the product model that switch of small electric current uses is very much however.

 

Plane diode

　　

In semiconductor odd chip (main ground is N silicon odd chip) go up, diffuse P impurity, use the screen function of film of oxidation of silicon chip surface, the PN that one part diffuses optionally only on chip and forms in N silicon sheet writtens guarantee. Accordingly, do not need to written guarantee to adjust PN the medicines and chemical reagents of the area corrodes action. Because semiconductor surface is made get level, get a name so. And, the surface that PN combines, because be enclothed by oxidation film, so fair it is good to consider as stability the type that grows with life. Original, to the semiconductor data that is used be to use denotative law to form, reason plane model call denotative plane model. To plane diode character, use the model that uses at commutate of big electric current it seems that very few, and the model that makes switch of small electric current use is very much.

 

Alloy diffuses model diode

　　

It is alloy model a kind. Alloy material is easy the material that is diffused. Distribute the material that makes hard through ably mix into foreign matter, can diffuse too together with alloy, so that the appropriate chroma of foreign matter is obtained in the PN tie that has formed,distributing. This law applies to the transfiguration diode that makes tall sensitivity.

 

Extension diode

　　

With denotative face long process makes the diode that PN writtens guarantee and forms. Very excellent technology needs when making. Because can optional ground controls the different pH indicator of foreign matter to distributing, the transfiguration diode that reason spends at making Gao Lingmin aptly.

 

Diode of Xiao Te radical

　　

Fundamental is: In the metal (for example lead) with semiconductor (N silicon chip) on interface, will hold back retrorse voltage with the Xiaoteji that already formed. Xiaoteji and the rectification action principle that PN writtens guarantee have the difference of essential sex. Its compression degree has 40V left and right sides only. Its specialty is: Switch rate is very rapid: Restore time Trr reversely particularly short. Accordingly, can make switch 2 extremely with diode of commutate of low-pressure big electric current.

 

2, classify according to utility

 

Demodulation uses diode

　　

With respect to the principle character, taking out modulation signal from inside inputting signal is demodulation, the size that sheds electric current in order to rectify (100mA) call what output electric current is less than 100mA demodulation normally as borderline. Germanium material point contact, working frequency can amount to 400MHz, to pressure fall small, knot electric capacity is small, demodulation efficiency is tall, frequency character is good, for 2AP model. Similar point is touched model in that way the diode that demodulation uses, outside dividing diode, still can use at be restricted, cut the circuit such as wave, modulation, mixing, switch. Also two diode with good consistency of character of appropriative of demodulation of promising frequency modulation are combined.

 

Rectification uses diode

　　

With respect to the principle character, the dc that gets outputting from inside input communication is rectification. The size that sheds electric current in order to rectify (100mA) call what output electric current is more than 100mA rectification normally as borderline. Face knot, working frequency is less than KHz, highest and retrorse voltage divides A ～ X to 3000 bend over from 25 bend over in all 22 archives. Classification is as follows: 2CZ of diode of commutate of ① silicon semiconductor, commutator of ② silicon bridge-type QL, the 2CLG that ③ uses at silicon of television high pressure to pile working frequency close 100KHz.

 

Be restricted with diode

　　

Most diode can make in the limit of use. Also the elephant is protected appearance is used and canal of high frequency Qi Na is in that way special be restricted a diode. To make these diode have the particularly powerful effect that limits acerb amplitude, use the diode that silicon material makes normally. Also such component sells: The basis restricts voltage need, a certain number of necessary rectification diode series connection rises form a whole.

 

Modulation uses diode

　　

What point to normally is diode of annular modulation appropriative. Namely the combination of 4 good to characteristic consistency diode. Although other transfiguration diode also has modulation use, but they are to serve as frequency modulation to use directly normally.

 

Mixing uses diode

　　

When means of use diode mixing, in 500 ～ 10, inside the frequency limits of 000Hz, use Xiaoteji more model with point contact diode.

 

Enlarge uses diode

　　

With diode enlarge, have support channel diode and aspect effect diode roughly the enlarge of parts of an apparatus of sex of in that way negative block, and the parameter microscope that uses transfiguration diode. Accordingly, enlarge uses diode is to point to channel diode, aspect effect diode and transfiguration diode normally.

 

Switch uses diode

　　

Have fall in small electric current (10mA degree) use logistic operation and the magnetism core drive that use below hundreds milliampere use switch diode. The switch diode of small electric current is contacted a bit normally model with key model wait for diode, also the silicon that works possibly still below high temperature diffuses model, mesa peace face diode. The specialty of switch diode is switch speed fast. And the switch time of Xiaoteji diode is especially short, it is ideal switch diode consequently. 2AK point contact is circuit of middling speed switch to use; 2CK smooth surface contact is circuit of high speed switch to use; Use at switch, be restricted, clamp or the circuit such as demodulation; Xiaoteji (SBD) switch of silicon big electric current, to pressure fall small, speed fast, efficiency is tall.

 

Transfiguration diode

 

Use at automatic frequency to control (AFC) the small-power diode that uses with tuning calls transfiguration diode. Japanese manufacturer respect also has other a lot of calling law. Through bringing to bear on retrorse voltage, the static capacitance that makes its PN writtens guarantee produces change. Accordingly, be used wait for utility at oscillation of automatic frequency control, scanning, frequency modulation and tuning. Normally, although be,use silicon diffuse model diode, but also can use alloy to diffuse model, denotative union, double diffuse model etc special made diode, because of these diode to voltage, its are electrostatic the metabolic rate of the capacity is particularly old.

Knot capacitance changes along with retrorse voltage VR, replace alterable electric capacity, use as harmonious loop, oscillating circuit, Suo Xianghuan road, commonly used at the television the channel of high frequency head is changed and harmonious circuit, make with silicon material more.

 

Frequency times add with diode

　　

The frequency to diode times add effect and character, the frequency that has support transfiguration diode times add and support rank is jumped (namely leap) the frequency of diode times add. Frequency times add used transfiguration diode to call alterable reactor, although alterable reactor controls the working principle of used transfiguration diode with automatic frequency identical, but the construction of reactor can bear however high-power. Rank jump diode to be called again rank jump restore diode, from guide connect switch to arrive to restore time Trr when shutting reversely short, accordingly, its specialty is allegro turns the move that close into time significantly short. If be opposite rank jump diode to bring to bear on sine wave, so, because of Tt (change time) short, so output weaveform is placed suddenly urgently, reason can produce a lot of high frequency harmonic.

 

Stabilized voltage diode

　　

It is the product that substitutes diode of stabilized voltage electron. Be made those who be silicon diffuse model or alloy. It is retrorse puncture character the curve is urgent the diode that changes suddenly. As control voltage and standard voltage are used and make. The upright voltage when diode works (call Qi Na voltage again) control 150V from 3V, press every other 10% , can differentiate a lot of grade. In power respect, also have come from 200mW the product of 100W above. The job is in retrorse puncture condition, silicon material is made, dynamic resistor RZ is very small, it is 2CW commonly model; two complementary diode is strung together reversely receive it is 2DW in order to reduce temperature coefficient model.

 

PIN diode (PIN Diode)

　　

This is to be between P area and N area clip asks for semiconductor one layer originally (or the semiconductor of low density impurity) tectonic crystal diode. The I in PIN is the English abbreviation that “ imposes ” import originally. When its job frequency exceeds 100MHz, because minority carries stream child the effect that put store and “ ask for the transit time effect in ” layer originally, its diode loses rectification action and turn impedance into component, and, its impedance is worth along with bias voltage change. In 0 slant buy or dc slant reversely when buy, the impedance that “ collects ” area originally is very tall; Flowing continuously to slant when buy, because carry,flow child infuse “ collects ” area originally, and make “ asks for ” area to present a low impedance position originally. Accordingly, can use PIN diode as alterable impedance component. It often is applied at high frequency switch (namely microwave switch) , move photograph, modulation, be restricted in waiting for circuit.

 

Avalanche diode (Avalanche Diode)

　　

It is the transistor that can produce high frequency vibration below extra voltage action. The working principle that produces high frequency vibration is goldenrain tree: Use avalanche puncture to carry to crystal infuse stream child, flow because of carrying child cross the time with jump over chip to need proper, so lag of its electric current at voltage, occurrence defer time, if dominate transit time appropriately, so, can appear on electric current and voltage relation negative block effect, produce high frequency vibration thereby. It often is applied in the oscillating circuit of microwave domain.

 

River Qi diode (Tunnel Diode)

　　

It is the crystal diode that is heft of main electric current with channel effect electric current. Its base material is arsenic changes gallium and germanium. The N of its P area area is tall adulteration (namely of high concentration impurity) . Channel electric current by these brief and mechanical effect place produces the quanta of voice semiconductor. Produce channel effect to have 3 following requirements: ① Fermi energy level is located in inside conduction band and full belt; Width of ② space charge layer must very narrow (0.01 micron are the following) ; Brief and the cavity in semiconductor P area and N area and electron have on same energy level hand in folded possibility. River Qi diode is parts of an apparatus of double terminal active. Its are main parameter has peak cereal electric current to compare (IP ／ PV) , among them, suffix “P” represents “ peak ” ; And ” of cereal of “ of suffix “V” delegate. River Qi diode can be applied in low noise radioamplifier and high frequency oscillator (its job frequency can amount to millimeter wave band) , also can be applied in circuit of high speed switch.

 

Close quickly (rank jump restore) diode (Step Recovary Diode)

　　

It also is a kind of diode that has PN tie. The characteristic on its structure is: In PN knot attrib border place has abrupt impurity to distributing area, form ” of “ self-help electric field thereby. Because PN writtens guarantee,falling to bias voltage, carry with minority stream child electric, have charge to put lay aside effect around PN knot, make its retrorse electric current needs to experience a “ to put the ability after ” of lay aside time to fall to the least value (retrorse and saturated electric current is worth) . Rank jumped the ” of “ self-help electric field that restores diode to shorten the time that put store, make retrorse electric current ends quickly, produce rich harmonic heft. Use these harmonic heft to be able to design pectination spectrum to produce circuit. Close quickly (rank jump restore) diode is used in pulse and circuit of Gao Cixie wave.

 

Diode of Xiao Te radical (Schottky Barrier Diode)

　　

It is the “ metal semiconductor that has character of Xiao Te radical the diode of knot ” . Its to initiative voltage inferior. Its metal layer removes material outside, still can use the data such as gold, molybdenum, nickel, titanium. Its semiconductor material uses silicon or arsenic changes gallium, it is N semiconductor more. This kind of parts of an apparatus is carry by majority stream child electric, so, its are retrorse saturated electric current relatively carry with minority stream child electric PN knot is gotten greatly much. Because the minority in diode of Xiao Te radical carries,flow child the effect that put store is very small, so its frequency rings to be restricted for RC time constant only, consequently, it is high frequency the ideal parts of an apparatus with sudden switch. Its job frequency can amount to 100GHz. And, MIS (metal – dielectric – semiconductor) diode can use Xiaoteji to make solar battery or glow diode.

 

Damp diode

　　

Have taller retrorse job voltage and peak value electricity, to pressure fall small, diode of commutate of high frequency high pressure, use in circuit of television line scanning to make damp and step up commutate use.

 

Twinkling changes voltage restrains diode

 

TVP canal, undertake passing quickly pressing protective to circuit, cent ambipolar model and sheet pole two kinds, press peak value power (500W – 5000W) with voltage (8.2V ～ 200V) classification.

 

Double base diode (odd form transistor)

　　

Two base, one blasts off extremely 3 end lose block parts of an apparatus, with Yu Zhangchi oscillating circuit, time voltage numerates in circuit, it is good that it has stability of frequency easy mix, temperature wait for an advantage.

 

Glow diode

　　

Change arsenic of gallium, phosphor to change gallium material to be made with phosphor, volume is minor, giving off light to drive. Working voltage is low, working electric current is small, give off light even, life is long, but aglow, yellow, green monochromatic is smooth.

 

3, classify according to character

 

Point contact diode, by to classify as follows with retrorse character.

 

Use point contact diode commonly

 

Place of caption of no less than of this kind of diode says in that way, be made diode and rectification circuit medium normally, be to particularly as good as retrorse and characteristic both neither, particularly not bad also semifinished product. Be like: SD34, SD46, 1N34A belongs to this kind etc.

 

Point contact of tall retrorse compression diode

　　

It is the greatest peak value retrorse voltage and the biggest dc are retrorse the product with very expensive voltage. Use the demodulation at high-pressured circuit and commutate. The diode of this kind of model is general not quite good to character or general. In diode of point contact germanium, SD38, 1N38A, OA81 is waited a moment. Diode of material of this kind of germanium, its compression is restricted. The demand is higher from time to tome silicon alloy and diffuse model.

 

Point contact of tall retrorse resistor diode

　　

Mixing to voltage character use diode commonly identical. Although its turn over directional compression,also be particularly tall, but retrorse electric current is small, accordingly its specialty is retrorse resistor tall. In the circuit that uses the circuit at tall input resistor and resistor of tall block bear, with respect to germanium material tall retrorse resistor diode, SD54, 1N54A belongs to this kind of diode etc.

 

Tall conduct point contact diode

　　

It and tall retrorse resistor contrary. Its are retrorse although character is very poor, but make becoming enough to resistor small. Right tall conduct point contact diode and character, SD56, 1N56A is waited a moment. Right tall conduct key diode and character, can get better character. This kind of diode, in bear resistor particularly low circumstance falls, rectification efficiency is taller.

 

Note of diode type selecting:

 

Diode parameter needs to fall the forehead is used, referenced ” fall frontal standard ” , pay close attention to please " hardware 100 thousand why " send “ normative ” .

 

Glow diode:

 

Actor choosing diameter is 1) glow diode the model inserting a foot of 5mm. Stick a glow diode actor choosing is chosen have solder the model of frame, ESD/MSL grade follows afore-mentioned standard.

 

Actor choosing has 2) glow diode of edge, short foot; To maintain the consistency of company product, red aglow, green hair is green wait for model actor to choose, white hair red, white hair is green wait for model careful anthology; If do not have special requirement, do not use long foot, brimless as far as possible.

 

3) glow diode actors or actress selection card is “ 100 million smooth ” .

 

Fast restore diode:

 

1) low voltage (compression value 200V is the following) below, diode of Xiao Te radical is chosen when fast time response;

 

Xiaoteji is in charge of 2) thermal resistance and electric current are bigger, actor or actress the vertical that choose cent is enclosed. Normally 3A can choose SOD-123 below or D-64 is enclosed; 3 ～ 8A can choose D2 – PAK is enclosed; 8A above DO-201, TO-220, TO-3P.

 

3) chooses PIN structure when tall voltage fast restore diode.

 

Rectification diode:

 

1) main consideration is the electric current of the biggest commutate, biggest retrorse job electric current, end frequency and restore the parameter such as time reversely;

 

Commutate of 2) switch power source, pulse commutate uses rectification diode, frequency of appropriate choosing job is taller, retrorse restore time shorter, or anthology fast restore diode.

 

The commutate when 3) low voltage, big electric current, choose diode of Xiao Te radical.

 

4) is the same as voltaic grade first choice presses top model instead. If 1N4007 is chosen under 1A (M7) , of 3A choose IN5408.

 

Diode of Xiao Te radical:

 

The reservation that is the same as voltaic class controls highest social estate instead, be like: 1N5819 reservation, 1N5817 is banned anthology, SS14 reservation, SS12 is banned choose;B340A preservation.

 

Stabilized voltage diode:

 

1) stabilizes voltage value to answer to be worth with the fiducial tension that uses circuit identical;

 

Prep above of the biggest stable electric current applies 2) the biggest load current of circuit 50% the left and right sides;

 

3) stabilized voltage is in charge of what notice power of parts of an apparatus without fail when type selecting to fall frontal processing. Real power should be less than 0.5×P.

 

4) power chooses to stick a type to enclose in the model under 0.5W, 0.5W and above choice insert type to enclose continuously

 

Transient state restrains diode:

 

1)Vrmax (voltage of the biggest retrorse job) voltage of ≥ regular job.

 

2)Vcmax (most tongs voltage) ≤ is the biggest allow safe voltage. Voltage of power source of groovy CMOS circuit is 3 ～ 18V, puncture voltage is 22V, the TVS that should choose Vcmax to be 18 ～ 22V is in charge of.

 

3)Pp (the maximum of power of transient state pulse) = is the biggest Ipmax of electric current of peak value pulse and Vcmax. Pp is more than by the biggest transient state of protective parts of an apparatus or circuitry

 

4) surge power.

 

5) brand: Actor chooses NXP and ON.

 

Of diode detect (it is with Xiaoteji exemple)

 

Xiaoteji (Schottky) diode also calls Xiaoteji power base diode (abbreviation SBD) , it is a kind of low power comsumption, freeboard fast semiconductor device, apply extensively at the circuit such as switch power source, transducer, driver, make diode of commutate of high frequency, low pressure, big electric current, follow on current diode of diode, protection is used, or diode of rectification diode, small signal demodulation is made use in the circuit such as microwave communication.

 

1. Function is compared

　　

Next watches listed diode mixes Xiaoteji super- fast restore to restore diode, silicon diode, quickly the function of diode of switch of high speed of diode of high frequency commutate, silicon is compared. See by the watch, although the Trr of diode of switch of silicon high speed is extremely low, but average commutate electric current is very small, cannot make commutate of big electric current use.

 

 

2. Detect method

　　

Detect below through an example the method of diode of Xiao Te radical. Detect content includes: ① identifies electrode; ② checks the one-way conductivity of pipe; ③ is measured guide pressing falls VF; ④ measures VBR of retrorse puncture voltage.

 

 

The canal that be measured is B82-004 Xiaoteji to be in charge of, share 3 pin, pin according to the front (literal front person) from left make up to right order on serial number ① , ② , ③ . Choice 500 model the R×1 archives of avometer undertakes metrical, full data trims next lists:

 

Test conclusion:

 

The first, go out according to all can be being measured between ④ of — of ① — ② , ③ to resistor, decide the canal that be measured is in all shade is right canal, foot of ① , ③ is two positive pole, ② foot is communal cathode.

 

The 2nd, because of ① — ② , ③ — ② between to resistor a few ohm, and retrorse resistor is infinity, reason has one-way conductivity.

 

The 3rd, in-house of diode of two Xiao Te radical guide is connected pressure fall to be 0.315V, 0.33V respectively, all under manual in given the biggest allow to be worth VFM(0.55V) .

 

Additionally Europe of use ZC 25-3 million is expressed and 500 model the 250VDC archives of avometer is measured piece, in-house the VBR of retrorse puncture voltage of two canals is ordinal for 140V, 135V. Check manual, the voltage of highest and retrorse job of B82-004 (namely voltage of retrorse peak value) VBR=40V. Make clear stay have higher safety factor.

 

The parameter of diode explains

 

Groovy parameter: to pressure fall, retrorse puncture voltage, permanent current, retrorse leakage of electricity;

 

Communicate parameter: The switch speed, time that put store, end capacitance of frequency, impedance, knot;

 

Ultimate parameter: Electric current of the temperature of power of the biggest dissipation, job, storage ambient, biggest commutate.

 

It is easy that we know diode is had from P model carry electricity to N semiconductor, and the character that is in what opposite way passes not easily. These two kinds of character closed to produce the effect of capacitor, namely the action of save up charge. Save up has charge, want to discharge of course. Discharge can undertake in any direction. And diode has electric current to had circulated this kind of statement in a direction only, strictly speaking does not hold water. This kind of circumstance is in high frequency when apparent show comes out. Accordingly, of diode extremely capacitance with small had better.

 

The biggest rating

　　

Although VRM of voltage of the greatest retrorse peak value does not have retrorse electric current, want to heighten retrorse tension ceaselessly only, can make diode damages sooner or later. This kind can increase the retrorse tension on, not be instantaneous voltage, the positive and negative that adds repeatedly however to voltage. What add because of giving rectifier is alternating voltage, its maximum is main factor of the regulation.

 

The biggest dc is retrorse voltage VR voltage of afore-mentioned the greatest retrorse peak value are the peak value tension that increases repeatedly, VR is the value when adding volts d.c. continuously. Use at dc road, it is very important that retrorse voltage is worth to allowing certainly and upper limit is worth the biggest dc.

 

Isurge of electric current of the biggest surge

　　

Allow has flowed excessive to electric current. It is not normal electric current, however instantaneous electric current, this value is quite great.

 

IO of electric current of the biggest average commutate

　　

In half commutate circuit, shed the maximum of the average commutate electric current of overload resistor. This is the very fundamental value when the design.

 

The biggest communication inputs voltage VI

　　

Galvanic way is worked in half (resistor bear) on the virtual value of the sine alternating voltage that add. This also is the very important parameter when choosing rectifier. The greatest peak value is worth to has flowed the biggest electric current to voltaic IFM, this also is the important parameter when designing rectification circuit.

 

Most high-power P

　　

There is electric current to had flowed in diode, with respect to meeting absorption of heat, and make oneself temperature elevatory. Most the maximum that high-power P is power. Specific tell even if add in diode the voltage of two end takes the electricity that passes with flowing. This limit parameter is right stabilized voltage diode, alterable resistor diode appears particularly important.

 

IR of retrorse electric current

　　

Say commonly, had flowed without retrorse electric current in diode, actually, increase constant retrorse tension, total meeting has electric current to had flowed, this is retrorse electric current. Need not say, good diode, retrorse electric current is lesser.

 

Restore time Tre reversely

 

Show what falling to electric current and voltage of the biggest retrorse transient state is the load in the regulation, retrorse restore time. From becoming retrorse voltage to voltage, good case is electric current can instantaneous ends, actually, want defer little time commonly. Decision electric current ends the quantity of delay time, restore time reversely namely. Although it affects the switch rate of diode directly, but it is good to do not say this value is little certainly.

 

IF—Electric current of the biggest average commutate.

 

Point to diode period what allow to pass when the job is the biggest to average electric current. The knot area that this electric current writtens guarantee by PN and medicinal powder hot condition decision. The average electric current that when using, should notice to pass diode cannot be more than this value, should satisfy medicinal powder hot condition. For example the IF of 1N4000 series diode is 1A.

 

VR—Voltage of the biggest retrorse job.

 

Point to diode the biggest retrorse voltage that two end allow to bring to bear on. If be more than this value, retrorse electric current (IR) leap, the one-way conductivity of diode is destroyed, cause retrorse breakdown thereby. Take retrorse puncture voltage normally (the half of VB) serves as (VR) . For example the VR of 1N4001 is 50V, the VR of 1N4007 is 1OOOV.  

 

IR—Retrorse electric current.

 

Point to diode not retrorse electric current is worth when puncture. Temperature is very big to the influence of IR. For example 1N4000 series diode should be less than 500uA; to should be less than 5uA in the IR when 25°C in 100°C condition IR.

 

VR—Puncture voltage.

 

Show diode is retrorse the voltage value that volt-ampere character curve curves a dot quickly. When be soft character reversely, show the voltage that gives condition of retrorse leakage current to fall is worth.

 

Fm—Top job frequency.

 

The knot capacitance that basically writtens guarantee by PN and diffuse capacitance decision, if working frequency exceeds Fm, criterion function general cannot reflect the one-way electric conduction of diode well. For example the Fm of 1N4000 series diode is 3kHz.

  

CO—Capacitance of 0 bias voltage.

 

Point to diode two upright voltage are zero hour, diffuse the capacity the sum of capacitance and knot capacitance. Notable, as a result of the limitation of workmanship, although the diode of same type the disperse sex of its parameter is very big also. The parameter that gives out in manual often is a limits, if check conditional change, corresponding parameter also can produce change, the IR that measures so that model of 1N5200 series silicon seals rectification diode when 25°C for example is less than 1OuA, and turn into in the IR when 100°C be less than 500uA.

 

The main parameter of stabilized voltage diode

 

Vz—Stabilize voltage.

 

The stable tension that the two end when showing stabilized voltage canal carries rated electricity produce is worth. What this value follows working electric current and temperature is different and change somewhat. As a result of the difference of workmanship, the stabilized voltage value that same type stabilized voltage provides agrees not completely also. For example, the Vzmin that 2CW51 stabilized voltage is in charge of is 3.0V, vzmax is 3.6V.

 

Iz—Stabilize electric current.

 

The electricity that when showing stabilized voltage is in charge of generation to stabilize voltage, provides through this is worth. When be worth under this, although stabilized voltage canal is not cannot stabilized voltage, but stabilized voltage effect can become poor when; is worth high hereat, want not to exceed rated power loss only, also allow, and stabilized voltage function will be better, but should waste electric energy more.

 

Rz—Dynamic resistor.

 

Show stabilized voltage provides change of two upright voltage and the specific value that electric current changes. What this ratio follows working electric current is different and change, it is working electric current heals commonly big, dynamic resistor heals small. For example, when the working electricity that 2CW7C stabilized voltage provides is 5mA, when Rz is 1OmA for 18Ω; job electric current, when Rz is 20mA for 8Ω; , rz is 2Ω;>20mA maintains this numerical value basically.

 

Pz—Rated power comsumption.

 

Allow temperature rise decision by chip, its numerical value is stable voltage Vz and the product that allow Izm of the biggest electric current. For example the Vz that 2CW51 stabilized voltage is in charge of is 3V, izm is 20mA, the Pz that should be in charge of is 60mWo

 

Ctv—Voltage temperature coefficient.

 

It is the parameter that explains stable voltage value suffers temperature to affect. For example the Ctv that 2CW58 stabilized voltage is in charge of is + 0.07%/°C, namely temperature every are elevatory 1°C, value of its stabilized voltage will be elevatory 0.07% .

 

IR—Retrorse leakage current.

 

Point to the leakage current that stabilized voltage diode generates below the retrorse voltage in the regulation. For example when the VR=1V that 2CW58 stabilized voltage is in charge of, IR=O.1uA; is when VR=6V, IR=10uA.

 

Other parameter

 

CT—Power base capacitance

Cj—Knot (extremely) capacitance, state in diode two end add formulary bias voltage, the total electric capacity of germanium demodulation diode

Cjv—Capacitance of bias voltage knot

Co—Capacitance of 0 bias voltage

Cjo—Capacitance of knot of 0 bias voltage

Cjo/Cjn—Knot capacitance changes

Cs—Envelope capacitance or enclose capacitance

Ct—Total electric capacity

CTV—Voltage temperature coefficient. In the test electric current falls, of the absolutely change of the opposite change of stable voltage and environmental temperature than

CTC—Capacitance temperature coefficient

Cvn—Nominal capacitance

IF—Flowing to dc (to test electric current) . Germanium demodulation diode is in of the regulation falling to voltage VF, pass extremely the electric current between; Lot of silicon commutate canal, silicon falls in formulary use condition, be in what sine allows to be passed continuously in wave partly electric current of the biggest job (average) , what silicon switch diode allows to pass below rated power is the biggest flowing to dc; Measure stabilized voltage diode to electric parameter when given electric current

IF (AV)—to average electric current

IFM (IM)—Zheng Xiangfeng is worth electric current (to the biggest electric current) . Below rated power, those who allow to pass diode is the biggest to pulse electric current. Glow diode limiting current.

IH—Constant electric current, holding current.

Ii—Glow diode rises brightness electric current

IFRM—to repeat peak value electric current

IFSM—to do not repeat peak value electric current (surge electric current)

Io—Rectification electric current. In specific line formulary frequency and formulary voltage condition issue the working electricity that carries

IF(ov)—to overload electric current

IL—Photocurrent or limiting current of steady flow diode

ID—Dark current

IB2—Odd crystallization body provides medium base modulation electricity

IEM—Blast off extremely peak value electric current

IEB10—Double base sheet blasts off in knot transistor extremely with the first base retrorse electric current

IEB20—Double base sheet blasts off in knot transistor extremely to electric current

ICM—The biggest output is average electric current

IFMP—to pulse electric current

IP—The peak burns electricity

IV—Cereal burns electricity

IGT—Brilliant brake is in charge of control pole to touch hair electric current

IGD—Brilliant brake is in charge of control pole not to touch hair electric current

IGFM—Control pole is worth electric current to the peak

IR (AV)—Retrorse and average electric current

IR (In)—Retrorse dc flows (retrorse leakage current) . When measuring retrorse character, given retrorse electric current; Silicon caboodle is in sine in circuit of load of half resistor sex, when adding retrorse voltage to provide a value, the electricity that carries; Two end add silicon switch diode the electricity that carries when VR of retrorse job voltage; Stabilized voltage diode falls in retrorse voltage, the leakage current of generation; Rectification runs the leakage current that in sine voltage of half highest and retrorse job issues.

IRM—Electric current of retrorse peak value

IRR—Brilliant brake canal repeats average electric current reversely

IDR—Brilliant brake is in charge of off-state to repeat electric current on average

IRRM—Repeat peak value electric current reversely

IRSM—Do not repeat peak value electric current reversely (retrorse surge electric current)

Irp—Restore electric current reversely

Iz—Stable voltage electric current (retrorse test electric current) . When checking retrorse report parameter, given retrorse electric current

Izk—Stabilized voltage is in charge of genu to burn electricity

IOM—The biggest to (rectification) electric current. Below rated condition, can susceptive to electric current of the biggest instantaneous; The electric current of the biggest job that the sine in resistor sex bear allows to pass germanium demodulation diode continuously in half commutate circuit

IZSM—Electric current of surge of stabilized voltage diode

IZM—Electric current of the biggest stabilized voltage. Below power of the biggest dissipation stabilized voltage diode allows the electricity that carry

IF—to total instantaneous electric current

IR—Electric current of retrorse total instantaneous

Ir—Restore electric current reversely

Iop—Working electric current

Is—Steady flow diode stabilizes electric current

F—Frequency

N—Capacitance change index; Capacitance comparing

Q—Actor is worth (quality factor)

δvz—Stabilized voltage is in charge of voltage drift

Di/dt—On-state electric current is critical ascendant rate

Dv/dt—On-state voltage is critical ascendant rate

PB—Bear power of pulse burn down

PFT (AV)—guide understands average dissipation power

PFTM—Zheng Xiangfeng is worth dissipation power

PFT—guide understands power of total instantaneous dissipation

Pd—Dissipation power

PG—The door is extremely average power

PGM—Power of door pole peak value

PC—Control extremely average power or collector dissipation power

Pi—Power input

PK—Power of the biggest switch

PM—Rated power. Silicon detector knot is lukewarm not prep above 150 degrees can susceptive most high-power

PMP—The biggest leakage passes pulse power

PMS—The biggest bear pulse power

Po—Output power

PR—Retrorse surge power

Ptot—Total dissipation power

Pomax—Power of the biggest output

Psc—Output power continuously

PSM—Do not repeat surge power

PZM—Power of the biggest dissipation. In give use condition to fall, stabilized voltage diode allows susceptive most high-power

RF (R)—to differential resistance. Be in when guide is connected, electric current follows the addition of voltage index, appear apparent nonlinear characteristic. Falling to voltage in some, voltage increases V of small particle △ , increasing △ I accordingly to electric current, criterion I of △ V/ △ weighs differential resistance

RBB—The resistor between the base of double base transistor

RE—Radio frequency resistor

RL—Laden resistor

Rs(rs)—-Series connection resistor

Rth—-Thermal resistance

R(th)ja—-The knot arrives environmental thermal resistance

Rz(ru)—Dynamic resistor

R(th)jc—The knot arrives the thermal resistance of housing

R δ—Attenuation resistor

R(th)—Transient state resistor

Ta—Environmental temperature

Tc—Housing is lukewarm

Td—Defer time

Tf—Decay time

Tfr—to restore time

Tg—Circuit inverting passes time

Tgt—Door pole dominates extremely enlightened time

Tj—The knot is lukewarm

Tjm—Highest knot is lukewarm

Ton—Open time

Toff—Pass time

Tr—Rise time

Trr—Restore time reversely

Ts—Memory time

Tstg—Temperature compensates the lay aside of diode to become temperature

A—Temperature coefficient

λp—Glow peak wavelength

△ λ—Spectral half width

η—Odd form transistor divides pressure ratio or efficiency

VB—Voltage of puncture of retrorse peak value

Vc—Rectification inputs voltage

VB2B1—The voltage between base

VBE10—Blast off extremely as retrorse as the first base voltage

VEB—Saturation pressing falls

VFM—The biggest to pressure fall (Zheng Xiangfeng is worth voltage)

VF—to pressure fall (to volts d.c. )

△ VF—to pressure fall poor

VDRM—Off-state repeats peak value voltage

VGT—Door pole touchs hair voltage

VGD—Door pole does not touch hair voltage

VGFM—Door pole is worth voltage to the peak

VGRM—The door is extremely retrorse peak value voltage

VF (AV)—to average voltage

Vo—Communication inputs voltage

VOM—The biggest output is average voltage

Vop—Working voltage

Vn—Central voltage

Vp—The peak hints tension

VR—Retrorse job voltage (retrorse volts d.c. )

VRM—Voltage of retrorse peak value (supreme test voltage)

V (BR)—Puncture voltage

Vth—Voltage of a powerful person (the door is restricted voltage)

VRRM—Repeat peak value voltage reversely (retrorse surge voltage)

VRWM—Voltage of retrorse job peak value

V V—Cereal hints tension

Vz—Stabilize voltage

△ Vz—Increment of voltage of stabilized voltage limits

Vs—Lead to voltage (signal voltage) or steady flow canal stabilizes voltaic voltage

Av—Voltage temperature coefficient

Vk—Genu hints tension (steady flow diode)

VL—Limiting voltage