Of transistor delay unripe

 

On December 23, 1947, the research group that in scientist of shellfish Er lab Xiao Kelai, Ba Ding and Brattain form proved the invention with 20 the most important centuries: The first true transistor, from now on the electronic period that the mankind entered flying development.

 

 

Be in 10 20 centuries are first years, semiconductor material has begun to apply in communication system. On 20 centuries half leaf, the ore reception of a radio of wide in radio lover popularity closes, use ore material of this kind of semiconductor undertakes demodulation. In the meantime, the electricity character of semiconductor also got applied in phone system.

 

The invention of transistor, the earliest can restrospect to 1929, engineer benefit lotus expends Er heart to had obtained the patent of a kind of transistor at that time. But, be confined to the technical level at that time, make the purity with the material enough short of of this kind of parts of an apparatus, and make this kind of transistor cannot be made come out.

 

The effect that is based on valve to process high frequency signal is not ideal, people thinks method improves the radiodetector of ore antenna type that uses in ore radio. In this kind of radiodetector, surface of ore of root and one semiconductor connects touched wire, it can let signal electric current flow along a direction already, can prevent signal electric current to flow toward opposite way again. Erupt in the Second World War eve, shellfish Er lab is being searched than inchoate when the demodulation stuff with used galena crystal better performance, the function of the germanium crystal that discovers mix into has foreign matter of some kind of infinitesimal not only excel ore crystal, and the in some way is even better than valve commutator.

 

During the Second World War, many labs are mixed in concerned silicon of germanium material make and research a field theoretically, also obtained many result, this laid a foundation with respect to the invention that is transistor.

 

After the Second World War ends, to overcome the limitation of valve, shellfish Er lab intensified the basic research to solid electronic parts. The person such as Xiao Kelai discusses the possibility that makes enlarge parts of an apparatus or appliance with semiconductor material, decide to study the semiconductor data such as germanium, silicon centrally.

 

Summer 1945, shellfish Er lab held water formally to study a group with the semiconductor that Xiao Kelai heads, the member has the person such as Brattain, Ba Ding. Among them, brattain is in early began to work in this lab 1929, pursue the research of semiconductor for a long time, accumulated rich experience. They are passed a series of experiment and observation, realise the reason that the electric current in semiconductor magnifies effect arises stage by stage. In germanium piece underside receives electrify pole, insert in another on fine needle connects electrify to flow, let another fine needle stand by it as far as possible next, connect on faint electric current, can make original electric current produces very big change so. Faint electric current a few change, can produce very big effect to another electric current, this is action of “ enlarge ” .

 

The person such as Brattain still thinks up efficient way to achieve effect of this kind of enlarge. They are mixed in base blast off extremely between input a weak signal, the output between base and collector is carried, be a strong signal with respect to enlarge. In contemporary electron product, the enlarge effect of afore-mentioned crystal dynatron receives wide application.

 

The enlarge multiple of the solid parts of an apparatus or appliance that Ba Ding and Brattain make at first is 50 the left and right sides. Soon, they use two to lean very nearly (apart 0.05 millimeter) cirrus contact, will replace gold foil contact, made ” of “ point contact transistor. December 1947, the earliest practical semiconductor device on this world came out eventually, when experimenting first, it can magnify frequency signal 100 times, its appearance is briefer than match rod, but want a few thicker.

 

When naming for this kind of parts of an apparatus, brattain thinks of its resistor commutation is characteristic, namely it is to rely on a kind to input ” from “ low resistance to what the move electric current of ” of output of “ tall resistor will work, then entitle Trans-resister(changes resistor) , abbreviate is Transistor later, chinese translated term is transistor.

 

Point contact transistor has his drawback, it is put in noise big, be hard to control when power is great, suitable scope is narrow, workmanship is additionally complex, cause a lot of yield to taste the defect such as occurrence breakdown. To overcome above weakness, the bold tentative plan that Xiao Kelai offerred to use commutate of a kind of ” to written guarantee ” will replace metallic semiconductor contact.

 

Be in eventually 1950, ” of knot of face of the first “ transistor came out. Agree completely of its function and original tentative plan. 1956, because invent transistor, xiao Kelai, Ba Ding, cloth pulls a 3 people to have the honor to win Nobel physics at the same time award. Today’s transistor, still be knot of this kind of face transistor for the most part.

 

1954, as the work off of radio of the first transistor, transistor makes the one part of people culture, this is to be transistor contriver people a development of place commend.

 

Till 20 centuries 50 time later period, transistor became electronic phone to turn a when accept a system cannot intersected component, it is important to also make the other such as portable radio, computer and radar the crucial component of product and service.

 

As the ceaseless development of semiconductor technology, the traversal speed of transistor is faster, reliability is higher, cost is lower also. 1959, as can reach many transistor other electronic parts compositive the invention of the integrated circuit to a silicon chip, transistor obtained new breakthrough.

 

These tiny chip make not only the innovation of transistor reached new height, and the development that still promoted information age.

 

Since transistor is invented, its measure is ceaseless and narrow, to now, 6 billion (be equivalent to at present global population is measured) the bulk that transistor place constitutes an area to be a piece of credit card only nevertheless just.

 

 

The structure of transistor is characteristic

 

The structure of transistor

 

Transistor interior is become by two PN structure, thirdly electrode is collector respectively (express with alphabetical C or C) , base (express with alphabetical B or B) and blast off extremely (express with alphabetical E or E) . If graph 5-4 place is shown, the two PN knot of transistor calls market report to written guarantee respectively (between C, B pole) with emissive knot (between B, E pole) , it is between emissive knot and market report knot base area.

 

 

Differ according to the structure, transistor can be divided for PNP model with NPN model two kinds. Blast off in what two sort transistor can see on circuit graphic symbol extremely arrowhead (the way that represents collector electric current) different. Of PNP transistor blast off extremely inside arrowhead face, of NPN transistor blast off extremely outside arrowhead face.

 

The action of each electrode and electric current allocate dynatron

 

Transistor the action of the electrode of 3 electrode is as follows: Blast off extremely (E pole) use emissive electron; Base (B pole) with the amount that will control E pole to launch an electron; Collector (C pole) collect an electron with course of study.

 

Of transistor blast off extremely the concern between IC of electric current of voltaic IE and IB of base electric current, collector is as follows: IE=IB+IC

 

The working requirement of transistor

 

Transistor belongs to voltaic control semiconductor device, its magnify character basically is great ability of banish pointing to report. Alleged enlarge, be when showing when the base of transistor voltaic happening changes, its collector electric current will happen bigger change or after transistor had working requirement, if add a lesser signal from base, criterion its collector will output a bigger signal.

 

The main job requirement of transistor is emissive knot (between B, E pole) should add inferior to voltage (namely to bias voltage) , market report writtens guarantee (between B, C pole) should increase taller retrorse tension (namely retrorse bias voltage) .

 

Transistor launchs a knot approximating PN knot voltage to bias voltage, namely silicon canal is 0.6~0.7V, germanium canal is 0.2~0.3V. The retrorse bias voltage that market report writtens guarantee inspects specific type and decide.

 

The working status of transistor

 

Transistor has end, guide connect and saturated 3 kinds of condition. Do not have working requirement in transistor when, it is in off-state, internal resistance is very great, each extremely electric current is almost 0.

 

Add when the emissive knot of transistor appropriate when adding retrorse bias voltage to knot of report of bias voltage, market, transistor guides, decrescent of its internal resistance, each electrode all has working electric current to arise (IE=IB+IC) . Increase its to launch a knot appropriately to bias voltage, when making IB of base electric current increases, IC of collector electric current and blast off extremely voltaic IE also can increase subsequently.

 

Increasing what launch a knot when transistor to bias voltage to fair value (silicon canal is equal to or 0.7V of summary prep above, germanium canal is equal to or when 0.3V0 of summary prep above, transistor will from guide connect enlarge condition to enter saturated state, right now IC of collector electric current will is in bigger constant condition, and already did not get control of IB of base electric current. Of transistor guide an internal resistance is very little (be equivalent to switch be being put through) , collector and blast off extremely the electric depress between writtens guarantee at blasting off voltage, market report writtens guarantee also by slant instead condition turns into to slanting condition.

 

The ultimate cluster of transistor reachs model

 

High frequency transistor

 

High frequency transistor (the transistor that shows diagnostic frequency is more than 30MHZ) can divide for transistor of high frequency small-power and transistor of high frequency high-power.

 

Transistor of commonly used homebred and high frequency small-power has the type such as 3AG1~3AG4, 3AG11~3AG14, 3CG3, 3CG14, 3CG21, 3CG9012, 3CG9015, 3DG6, 3DG8, 3DG12, 3DG130, 3DG9011, 3DG9013, 3DG9014, 3DG9043.

 

Import transistor of high frequency small-power commonly usedly to have the type such as 2N5551, 2N5401, BC148, BC158, BC328, BC548, BC558, 9011~9015, S9011~S9015, TEC9011~TEC9015, 2SA1015, 2SC1815, 2SA562, 2SC1959, 2SA673, 2SC1213.

 

High frequency transistor of medium, high-power is used at video commonly enlarge circuit, before circuit of switch of buy enlarge circuit, complementary drive circuit, high pressure and travel are driven wait for circuit.

 

Commonly used homebred and high frequency transistor of medium, high-power has the type such as 3DG41A~3DG41G, 3DG83A~3DG83E, 3DA87A~3DA87E, 3DA88A~3DA88E, 3DA93A~3DA93D, 3DA151A~3DG151D, 3DA1~3DA5, 3DA100~3DA108, 3DA14A~3DA14D, 3DA30A~3DA30D, 3DG152A~3DG152J, 3CA1~3CA9.

 

Commonly used entrance is high frequency transistor of medium, high-power has the type such as 2SA634, 2SA636, 2SA648A, 2SA670, 2SB940, 2SB734, 2SC2068, 2SC2258, 2SC2371, 2SD1266A, 2SD966, 2SD8829, S8050, S8550, BD135, BD136, the main parameter of each canal sees watch 5-4.

 

Ultrahigh frequency transistor

 

Ultrahigh frequency transistor also calls microwave transistor, its frequency character is general prep above 500MHZ, wave band of microwave of the processing in basically be being used at the domain such as TV, radar, navigation, communication (the frequency of 300MHZ above) signal.

 

Commonly used homebred UHF transistor has 3AG95, 3CG15A~3CG15D, 3DG56 (2G210) , 3DG80 (2G211, 2G910) , 3DG18A~3DG18C, 2G711A~2G711E, 3DG103, 3DG112, 3DG145~3DG156, 3DG122, 3DG123, 3DG130~3DG132, 3DG140~3DG148, 3CG102, 3CG113, 3CG114, 3CG122, 3CG132, 3CG140, 3DA89.

 

Commonly used entrance UHF transistor has the type such as 2SA130, 2SA1855, 2SA1886, 2SC286~2SC288, 2SC464~2SC466, 2SD1266, BF769, BF959.

 

Transistor of medium, low frequency

 

The diagnostic frequency of low frequency transistor is general under or be equal to 3MHZ, the diagnostic frequency of intermediate frequency transistor is general under 30MHZ.

 

Transistor of small-power of medium, low frequency

 

Transistor of low frequency small-power basically is used at working frequency in inferior, power is in the circuit such as the low frequency enlarge under 1W and power enlarge.

 

Transistor of common small-power of homebred low frequency has the type such as 3AX1~3AX15, 3AX21~3AX25, 3AX31, 3BX31, 3AX81, 3AX83, 3AX51~3AX55, 3DX200~3DX204, 3CX200~3CX204, expressing 5-7 is the main parameter of each canal.

 

Import transistor of small-power of medium, low frequency commonly usedly to have the type such as 2SA940, 2SC2073, 2SC1815, 2SB134, 2SB135, 2N2944~2N2946.

 

Transistor of high-power of medium, low frequency

 

Transistor of high-power of medium, low frequency is used in the home appliance such as television, acoustics to adjust efferent of canal, switch canal, field, travel as power source commonly efferent, power efferent or use in car electron ignition circuit, inverter, UPS (UPS) in waiting for a system.

 

Transistor of commonly used high-power of homebred low frequency has the type such as 3DD102, 3DD14, 3DD15, 3DD52, DD01, DD03, D74, 3AD6, 3AD30, 3DA58, DF104, expressing 5-9 is the main parameter of each canal.

 

Import transistor of high-power of medium, low frequency commonly usedly to have the type such as 2SA670, 2SB337, 2SB556K, 2SD553Y, 2SD1585, 2SC1827, 2SC2168, BD201~BD204, expressing 5-10 is the main parameter of each canal.

 

Complementary to the canal

 

The output power that to enhance power enlarge tastes and efficiency, reduce lack fidelity, power amplifier uses circuit of enlarge of push-pull type power normally, magnify respectively by two complementary transistor namely of wave of a complete sine, lose half weeks of signal. This requirement the data phase of two complementary transistor, , performance data (for example FT of frequency of HFE of coefficient of enlarge of VCBO of highest and ICM of electric current of the dissipation power PCM, greatest collector, retrorse voltage, electric current, feature) also want to agree as far as possible before using, should undertake choosing “ conjugate ” .

 

Complementary use different polarity commonly to the canal to the canal, namely two transistor are NPN canal only, another is PNP canal.

 

Switch transistor

 

Switch transistor is the transistor with a kind of saturation and off-state commutation rapidder rate, apply extensively in all sorts of pulse circuit, switch circuit and power output circuit.

 

Transistor divides switch to be mixed for small-power switch transistor press high-power switch transistor high to wait instead

 

Small-power switch transistor is used at circuit of high frequency enlarge, pulse circuit, switch circuit and synchronous and detached circuit to wait commonly. Transistor of commonly used homebred small-power switch has series of 3AK series 3CK and 3DK series.

 

Press high-power switch transistor high to press high-power switch transistor high to all be silicon NPN normally instead instead model, its are highest and retrorse 800V of voltage VCBO prep above, switch power supply is made in basically be being used at monitor of colour television machine, computer efferent of canal, travel or use at ballast of car electron igniter, electron, inverter, UPS (UPS) in waiting for a product. Commonly used press high-power switch transistor high to have the type such as 2SD820, 2SD850, 2SD1401, 2SD1403, 2SD1432~2SD1433, 2SC1942 instead.

 

Take damp travel efferent

 

Taking damp travel efferent is will tall press resistor of high-power switch transistor and damp diode, protection to enclose the special electronic parts that forms for an organic whole instead, basically use in colour television machine or computer monitor.

 

Take damp travel efferent to the metal is enclosed (TO-3) seal with model (TO-3P) enclose a form two kinds.

 

Difference divides pair of canals

 

Poor cent also calls twin poor to canal or unifinication cent to the canal to the canal, it is two performance data identical transistor encloses the electronic parts that form together, be used in frequency amplifier commonly or poor cent is made input enlarge to be in charge of in instrument, appearance.

 

Poor cent has NPN to the canal model with two kinds of PNP structures. Common homebred NPN poor cent has the type such as 3DG06A~3DG06D to the canal. PNP poor cent has the type such as 3CSG3, ECM1A to the canal.

 

Common entrance NPN poor cent has the type such as 2SC1583 to the canal, PNP poor cent has the type such as 2SA798 to the canal.

 

Dalindu is in charge of

 

The canal also calls Dalindu compound transistor, have bigger voltaic enlarge coefficient and taller input impedance. It is divided again for common Dalindu Dalindu is in charge of canal and high-power.

 

Common Dalindu is in charge of normally by two transistor or many transistor compound join and become, interior does not lead protective circuit, dissipation power is under 2W.

 

The canal uses common Dalindu commonly TO-92 is plastic enclose, basically use at circuit of tall gain enlarge or relay drive circuit. Canal of commonly used general understand Lin Du has the type such as PN020, MP-SA6266.

 

High-power amounts to Lin Du to be in charge of the basis that provides in common Dalindu to go up, added the protective circuitry that comprises by release resistor and diode of follow on current, stability is taller, drive electric current is bigger.

 

Dalindu is in charge of high-power to use TO-3 to the metal is enclosed or use form of substandard of TO-126, TO-220, TO-3P commonly plastic enclose, basically use at the circuit such as drive of stabilized voltage of frequency power enlarge, power source, big electric current, switch control.

 

Take block transistor

 

The transistor that take block is will or those who form is enclose together after two resistor and transistor join, make inverter or fall implement, apply extensively in the home appliance product such as television, disc player, videocorder. Its enclose an appearance to have EM3, UMT, SST (the United States or European SOT-23) , SMT (SC-59/ Japan SOT-23) , MPT (SOT-89) , FTR and TO-92, dissipation power is 150~400mW.

 

The circuit graphic symbol of the transistor that take block and transistor of block of belt of article character date still do not have uniform standard symbol at present, of graphic symbol of the circuit in the electronic product in different manufacturer and article character date tag a method different also. For example, day stands, “QR” of commonly used letter expresses in the product of soft coarse company, toshiba company expresses with alphabetical “RN” , flying benefit riverside and NEC (day report) wait for a company to express with alphabetical “Q” , return “IC” of some plant family expenses to express, the literal symbol of transistor can be used in domestic electron product, express namely with alphabetical “V” or “VT” . Graph 5-12 is the circuit graphic symbol with commonly used transistor of block of the belt in product of different manufacturer electron.

 

Dynatron of commonly used entrance belt block has DTA series, DTB series, DTC series, DTD series, MRN series, RN series, UN series, KSR series, FA series, FN series, GN series, GA series, HC series, HD series, HQ series, HR. The commonly used homebred transistor that take block has GR series to wait.

 

Photosensitive dynatron

 

Photosensitive dynatron is the light that has enlarge capacity – report changes dynatron, in applying extensively at all sorts of light to dominate circuit.

 

When be shot without illumination, photosensitive dynatron is in off-state, believe an output without report. Light is become signal illuminate its base (window getting light) when, photosensitive dynatron will guide, from blast off extremely or the telegraphic date after collector outputs enlarge.

 

Photosensitive dynatron is in the literal symbol in circuit and common dynatron are identical, express with alphabetical “V” or “VT” .

 

Photosensitive dynatron has model to seal, the metal is enclosed (coping is vitreous lens window) epoxy resin, pottery and porcelain a variety of enclosing structure, bring a foot to also be divided mix for bipod 3 feet.

 

Commonly used homebred photosensitive dynatron with silicon NPN model give priority to have the type such as 3DU11~3DU13, 3DU21~3DU23, 3DU31~3DU33, 3DU51A~3DU51C, 3DU51~3DU54, 3DU111~3DU113, 3DU121~3DU123~3DU131~3DU133, 3DU311~3DU333, 3DU411~3DU433, 3DU80.

 

Magnetism quick dynatron

 

Magnetism quick dynatron is a kind of sensitive to magnetic field magnetism – report changes parts of an apparatus, it can change magnetism signal into telegraphic date.

 

Common magnetism quick dynatron has the type such as 3CCM and 4CCM. 3CCM is used ambipolar model structure, have, polarity of retrorse magnetism sensitivity, have affirmatory magnetism sensitive face (normally coloring dot is tagged) .

 

Magnetism quick dynatron is used at all sorts of magnetism such as control of electromotor rotate speed, guard against theft to dominate circuit commonly in.

 

Constant current dynatron

 

Constant current dynatron is a kind of special parts of an apparatus that can adjust and stabilizes electric current. 3 its electrode are zincous respectively (positive electrode) A cathode (negative pole) C is mixed control pole G. Through changing constant current dynatron the voltage of control pole, can adjust the size that constant current is worth.

 

Constant current dynatron is used at current limliting protection and power source of constant current standard commonly, also can make constant current parts of an apparatus or appliance in the circuit such as direct current source. Commonly used constant current dynatron has the type such as 3DH010~3DH050, limits of its constant current is 5~500Ma, working voltage is 5~80V.

 

The article is reprinted from sensor technology, author: Mao Fuli