[introduction]MOSFET, IGBT and BJTSemiconductor deviceswitch speed gets the influence of the capacitance of component itself. To satisfy the efficiency of circuit, the architect needs to know these parameter. For example, design an efficient switch power source to will ask the architect knows the electric capacity of equipment, because this will affect switch rate, affect efficiency thereby. These information are offerred in the index manual of MOSFET normally.

The switch speed of the semiconductor device such as MOSFET, IGBT and BJT gets the influence of the capacitance of component itself. To satisfy the efficiency of circuit, the architect needs to know these parameter. For example, design an efficient switch power source to will ask the architect knows the electric capacity of equipment, because this will affect switch rate, affect efficiency thereby. These information are offerred in the index manual of MOSFET normally.

Graph 1. The package class capacitance of power MOSFET

The look upon on the volume level that the capacitance of semiconductor device of 3 upright power can differ in two kinds: Package and circuit. Capacitance is examined to involve token on package the capacitance between every equipment terminal. Observe on circuit capacitance involves the combination that describes package class capacitance. For example, graph the 1 package class electric capacity that showed MOSFET of a power. Graph 2 to the graph the 4 package level that showed MOSFET of a power are mixed the relation between circuit class capacitance. To BJT and IGBT parts of an apparatus also can undertake similar capacitance measure.

The concern is as follows:

• CISS = CGS + CGD = inputs capacitance

• COSS = CDS + CGS = outputs capacitance

• CRSS = CGD = transmits capacitance reversely

       

Graph 2. The input capacitance of power MOSFET    Graph 3. The output electric capacity of power MOSFET    Graph 4. Transmit capacitance of power MOSFET reversely

The capacitance of parts of an apparatus changes along with the voltage that brings to bear on normally. Accordingly, complete token needs to understand the electric capacity below the biggest rated voltage. This applied process says how palpability uses what 4200A-CVIV switch offers to slant buy function and measure CISS, COSS and CRSS in Clarius. CVIV can be easily between I-V and C-V measured value switch, it is OK still move C-V measured value any equipment terminal, and need not join afresh or raise bougie.

The article still showed the dc of the instrument outputs voltage how to add 400V from 200V, undertake the measurement of taller voltage on leakage pole, this is helpful for testing the semiconductor of higher power, be like GaN parts of an apparatus. This function already was added in the version of Clarius V1.6 above and update.

One, equipment join

All SMU that the article describes and CVU join are to pass 4200A-CVIV to undertake connective. CVIV can have a 4210-CVU or 4215-CVU, at most can 4 SMU receive an equipment to go up repeatedly. Use 4200A-CVIV offerred the following advantage:

• Inside buy project is measurable the CISS that is as high as 200V and 400V, CRSS and COSS.

• 4200A-CVIV switch support is measured automatically. Do not need new link equipment or cable.

• The C-V of open circuit and short circuit is compensated.

Graph the 5 link that demonstrated MOSFET and CVIV. To this specific application process, need 3 SMU and a CVU to complete a test at least. Graph the 6 actual CVIV that showed enclosed MOSFET join. Ask an attention, all channels on CVIV are opened. 4 passageways of 4200A-CVIV will undertake configuration according to the configuration that checks every time, because this checks every time,do not need cable to join afresh.

             

Graph 5. MOSFET joins the output of 4200A-CVIV is carried        Graph 6. Enclose even what receive 4200A-CVIV MOSFET

2, in Clarius software configuration is measured

The library of Clarius has two projects that implement 3 upright capacitance to measure on Mosfet. These two projects configure likeness in Clarius, different point depends on ability. A project, “MOSFET 3-terminal C-V Test Using 4200A-CVIV Bias Tees ” use a SMU to add leakage end, from 0 scan to 200V dc bias voltage. Another project, “MOSFET 3-terminal C-V Tests Up To 400 V Using 4200A-CVIV Bias Tees ” use a kind of new method voltage from 0 to 400V. This kind of method uses 3 SMU scanning at the same time, a SMU, offer dc of a 400V to need minute of voltage.

Graph 7. The MOSFET-CVIV-CV-Bias-Tees project of module of use SweepV user

Graph 7 showed ” the MOSFET3 of use 4200A-CVIV BiasT carries C-V to check ” project, this project used the SweepV user module in Hivcvulib. This user module allows to be in leakage pole place to undertake scanning, and in parts of an apparatus every port place undertakes capacitance is measured. Above all, undertake open circuit and short circuit are compensated, in order to ensure accurate measurement. Carry out these compensation to need to implement specific configuration measure. They are called to compensate measure, offer in project tree. Before carrying out any tests, will check executive compensation to every. 4200A can store the compensation that configures to every, can carry out many tests. This project has 5 kinds of different configuration: CISS, CRSS, COSS, CGS and CDS.

CVIV configuration

Must configure CVIV for every test. CVIV has a lot of output pattern, these have a description in user manual. Watch 1 listed all sorts of output mode.

Express 1. 4200A-CVIV outputs mode

Graph 8 to the graph the condition of every passageway of the 12 CVIV that showed to every component and circuit class capacitance is measured.

Graph the 8 configuration that showed CGS, be in leakage pole place to scan when SMUDcWhen pressing, the grid that this test measured MOSFET is mixed the capacitance between source pole. Graph the 9 configuration that showed CDS, it is when SMU when volts d.c. of scanning of leakage pole place, this test measured leakage pole and source extremely the capacitance between. Graph 10 showed CRSS is configured. This test measures MSMU to sweep sweep leakage pole to transmit capacitance of the MOSFET when volts d.c. reversely.

           

Graph the 11 configuration that showed CISS, when this test measures MSU scanning volts d.c. , the input capacitance of MOSFET. Graph 12 showed COSS is configured, this test scans in SMU the output electric capacity that MOSFET gauges when the volts d.c. of leakage pole. Once carried out a test, data can be come out by scale. Graph the 13 capacitance character data that showed the MOSFET that generates by 4200A.

Graph 13. MOSFET scans the capacitance of 200V is characteristic

3, scanning of 400V volts d.c.

Use 4200A-CVIV much switch to scan at the same time many SMU, the output of MOSFET parts of an apparatus voltage turns over the times new method to 400V. These tests are in normally OFF condition (VGS = 0V) next undertaking. There is SMU of a scanning extremely in leakage normally, of the buy inside use 4200A-CVIV slant buy ability, electric capacity is gauged in every terminal.

Graph 14. 3 SMU scan at the same time

Graph the 14 3 scanning SMU that showed 3 port that receive MOSFET repeatedly. SMU1 and SMU2 will use the tension needing branch that is as high as 400V. SMU2 and SMU3 must fall to scan at the same time in identical voltage, this can make grid drops 0V. Use this kind of method, we can carry the scanning tension that produces a 400V in Drain. This method is used at enclosing parts of an apparatus only, and do not apply to equipment of brilliant round class.

Module of user of use Multiple SMU_SweepV carries out these measurement, can obtain in Hivcvulib user library.

Graph 15. Output is as high as 400V dc to need the item of cent

Graph the MOSFET3 port C-V that the items of 15 4200A-CVIV Bias Tee that showed Multiple SMU_SweepV of use user module undertake is as high as 400V checks. The setting pattern that the project establishs and an item are same. All CVIV configure an operation, include to compensate, finish with identical pattern. Exclusive distinction is, still must configure additionally two SMU. Below acquiescent circumstance, the test should be on Drain from 0 sweep 400V. Grid is mixed source pole SMU should scan below identical voltage at the same time. The user still can change CVU setting according to be being come to by the impedance of test equipment, be like frequency, limits and speed.

Graph 16. MOSFET scans the capacitance of 400V is characteristic

Graph 17. The output data that 400V scans

Graph 16 showed by the C-V that 400V is as high as on MOSFET of the test in 4200A-SCS scanning is pursued. The voltage that need branch is value of a computation. Distinction depends on leakage pole and source extremely the voltage between is different. Graph 17 showed output data, listed among them the scanning voltage on 3 port. Diffvoltage is the value of the voltage that need branch that computation gives.

4, summary

The switch speed of the semiconductor device such as MOSFET, IGBT and BJT gets the influence of component itself capacitance. This applied process says how palpability uses 4200A-CVIV to be able to be in do not need to join the circumstance of any cable falls afresh, slant in 200V dc these measurement undertake below the circumstance of buy, reduced user mistake thereby and allow automatic test. It still allows to gauge circuit class electric capacity directly, and do not need to pass package class capacitance, this allows circuit class architect to obtain requires data quickly.

In addition, electric capacity should be gauged on 3 upright parts of an apparatus when, in normally a terminal does not include to be being measured, its capacitance may affect whole to measure. Use in every port slant the effect that buy network removed exterior capacitance or short circuit.

We still revealed a kind of new method, undertake sweep through using 3 SMU at the same time, the dc of the 4200A that makes go up in 3 upright parts of an apparatus slants buy is double. Grid is mixed source pole SMU scans at the same time on same polarity, in order to avoid the effect of the condition opening state of equipment. Leakage pole SMU will scan the contrary polarity of source pole and grid, make the voltage that need branch turns over times thereby. This support is in leakage pole place to undertake the voltage of 400V scans is as high as, this is helpful for testing the semiconductor of higher power, be like GaN.

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