[introduction]Nitrogen changes gallium (GaN) semiconductor is in 20 centuries spend blue glow diode as Gao Liang first at the beginning of 90 time (LED) throws commercial application, make the core technology of player of blue smooth CD subsequently. Although henceforth already obtained great progress, but after near 20 years, this technology just transistor of because its are high-energy effect is characteristic and attendant effect (feasibility of commerce of the implementation on FET) .

Nitrogen changes gallium (GaN) semiconductor is in 20 centuries spend blue glow diode as Gao Liang first at the beginning of 90 time (LED) throws commercial application, make the core technology of player of blue smooth CD subsequently. Although henceforth already obtained great progress, but after near 20 years, this technology just transistor of because its are high-energy effect is characteristic and attendant effect (feasibility of commerce of the implementation on FET) .

Nitrogen changes gallium is one of fractionize markets with semiconductor industry the rapiddest growth at present, compound estimation is in year of increase rate 25% to 50% between, its driving force comes from right can effect is taller the demand of equipment, with period implementation can develop continuously and electrification target.

Compare with silicon transistor photograph, nitrogen changes gallium transistor to be able to design a bulk the parts of an apparatus with smaller, taller efficiency. Nitrogen changes gallium to lead microwave amplifier system with Yu Gaogong at first, the dimensions economy that changes gallium to make as a result of nitrogen and produce small-sized, power the ability of bigger amplifier, its apply limits to expand ceaselessly, formed the equipment market of a billions of dollar, cover consumption, industry and martial application field.

People thinks silicon MOSFET already achieved his to be in generally the academic limit of domain of electric power electron, and nitrogen changes gallium FET raising performance side to still have tremendous latent capacity further. Nitrogen changes gallium semiconductor most often use carborundum (SiC) serves as underlay, it is next more economic silicon or function are best but the costliest diamond. With photograph of silicon radical parts of an apparatus is compared, the working temperature that nitrogen influences gallium parts of an apparatus is higher, and electronic mobility and rate are higher, retrorse extensive telegram in reply carries on his shoulder or back lower or for 0.

What nitrogen changes the power density of gallium power semiconductor to change semiconductor of gallium power amplifier for arsenic about is fivefold. Change gallium and side direction to diffuse with arsenic metallic oxide semiconductor (the substitute photograph such as LDMOS) is compared, the power efficiency that nitrogen changes gallium semiconductor is amounted to 80% or taller, can provide more remarkable power, bandwidth and efficiency. Current, this technology already was applied extensively at all sorts of domains, from charge quickly power source adapter arrives bring into a car advanced drive support system (the light of ADAS) is explored and range finding (LiDAR) equipment.

Data center is another of the parts of an apparatus that is based on nitrogen to change gallium rising market, these parts of an apparatus can satisfy the power comsumption that grows increasingly and cooling requirement, reduce cost thereby, conduce to solve what operation business is being superintended and political level is faced with increasingly the environmental dispute of grow in quantity.

Semiconductor manufacturer and market study the company still is forecasted, arrive from more efficient batteries batteries drawing inverter, the low pressure of electric car and high-pressured application market will rise ceaselessly.

Up to now, this one domain is carborundum parts of an apparatus holds dominant position all the time, change gallium with nitrogen same, carborundum parts of an apparatus is by classify the broadband is unoccupied place (WBG) semiconductor, have tall electron mobility — can let component of electric power electron compare silicon radical component smaller, faster, more reliable, more efficient. The area that nitrogen turns gallium is unoccupied place for 3.4 EV, and the belt of carborundum is unoccupied place for 2.2 EV, the belt of carborundum is unoccupied place for 1.12 EV.

Compare with silicon photograph, the working frequency that nitrogen changes gallium and carborundum power semiconductor rate of taller, switch is rapidder, conduct resistor lower. Carborundum parts of an apparatus can work below taller voltage, and nitrogen changes gallium parts of an apparatus to be able to offer rapidder switch rate with lower energy, can let design personnel to reduce dimension and weight thereby. Carborundum is supportable be as high as 1, the voltage of 200 bend over, and nitrogen changes gallium to be thought to suit more normally highest the voltage of 650 bend over, although rolled out the parts of an apparatus of taller voltage recently.

Change gallium and other semiconductor to be compared with arsenic, nitrogen changes gallium to be able to provide the frequency range power of about 10 times (graph 1) .

Graph 1: The comparison of electronic parts of power of microwave frequency range. (origin: Analog Devices, inc. )

The design considers a factor

According to estimation, there is 70% in the electric energy that the whole world wastes or above is used up by equipment of electric power electron. Rely on nitrogen to change the WBG character of gallium, design personnel can use his higher power density, outstanding efficiency and exceed rapid switch rate, make a smaller power cable subsystem.

This technology stores for electric power electron, car, solar energy and the many markets such as data center brought innovation. Nitrogen changes gallium parts of an apparatus to have very strong fight radiant energy force, suit burgeoning military affairs and aerospace application very much.

Some electrons design staff because the likelihood abandons to the misunderstanding of cost of material using nitrogen to influence gallium power parts of an apparatus. Although nitrogen influences the production cost of gallium underlay original outclass silicon underlay, but this one difference is greatly narrow already, and the use of different underlay can let design personnel to find optimal balance place between cost and function.

Silicon radical nitrogen changed gallium to offer the vastest market potential to design staff, optimal balance achieved between cost and function. Nevertheless, had silicon radical nitrogen to change gallium and diamond base nitrogen changes gallium these two kinds of choices, products plan personnel can choose the most appropriate underlay, the demand that with satisfying its are organized and the client compares to sexual price.

The switch rate that changes gallium as a result of nitrogen is very high, design personnel needs special attention electromagnetism is disturbed (EMI) , and if where,this kind of interference is reduced in layout of power source loop. Active grid driver is crucial to preventing voltage to rush too, the electromagnetism that can reduce switch weaveform to arise is disturbed.

Another crucial design question is the parasitism inductance that brings about false triggering possibly and capacitance. Of performance dominant position the biggest change depend on transverse the optimal layout with loop of fore-and-aft power source, and of driver rate and equipment rate match.

Design personnel still must optimize heat management, prevent overheat to affect function and reliability. Should decreasing according to enclosing inductance and medicinal powder the ability of hot field undertakes assessment to enclosing.

Analog Devices rolls out nitrogen to change gallium power amplifier

Electronic system need is pressed in power supply of place of the sources of energy and circuit place needs power supply transition has between voltage. The semiconductor company Analog Devices of the first of all, inc. (The high-powered nitrogen that ADI) devotes oneself to to offer industry to precede all the time changes gallium power amplifier and technical support, can let design personnel to achieve highest function goal, push its solution quickly to the market.

The advantage that grid driver and step-down controller produce nitrogen to influence gallium power parts of an apparatus to utmost ground is crucial. Half bridge nitrogen changes gallium driver to be able to improve the switch function of power source system and integral efficiency. DC-DC step-down converter can be taller input voltage changeover inferior output voltage.

The LT8418 that ADI offers is a 100 V driver of half bridge GaN, compositive control of logic of class, driver, protection mixes coping and bottom driver to lift switch oneself (graph 2) . It can be configured for synchronism half bridge step-down or step up develop attack structure. Shunt grid driver can adjust what nitrogen changes transistor of gallium field effect to guide connect and close to press place rate, optimize EMI function thereby.

Graph 2: ADI is based on the principle of converter of LT8418 switch DC/DC of GAN to pursue. (origin: Analog Devices, inc. )

Input of ADI GaN driver and output have state of acquiescent low n, connect in order to prevent GaN FET misdirect. The defer of 1.5 Ns matchs between the fast transmission defer that depends on 10 Ns and coping and bottom passageway, all sorts of power source that LT8418 applies to market of power source of center of amplifier of frequency of assonance of driver of converter of high frequency DC/DC, electric machinery, D, data and consumption, industry and car apply.

LTC7890 and LTC7891 (graph 3) it is high-powered respectively, double passageway and only channel step-down DC arrives controller of DC switch manostat, use at the synchronism of raceway groove of N of input voltage drive from highest 100 V level of GaN FET power. These controller aim to solve design personnel to turn a lot of challenge that faces when transistor of gallium field effect in use nitrogen, need not the protective diode that silicon MOSFET solution uses normally or other and extra exterior element, simplified to use a design thereby.

Graph 3: The LTC7891 step-down controller of ADI. (origin: Analog Devices, inc. )

Every controller can let design personnel to adjust accurately 4 V comes the grid driving voltage of 5.5 V, in order to optimize function, allow to use different GaN FET and logistic n MOSFET. In-house intelligence lifts switch to be able to prevent BOOSTx to bring a foot to bring overcharge of power source of driver of side of crural high pressure to SWx in dead band time oneself, protect the grid of coping GaN FET thereby.

These two component the grid driver sequential that interiorly optimized two switch edge, make dead band time is close to Yu Ling, improved efficiency thereby, realized high frequency rate to move. Design personnel still can use exterior resistor to adjust dead band time. These parts of an apparatus use square compressed without cite a base (QFN) is enclosed, take but embellish wet flank. Principle graph was revealed use 40 bring foot, 6 Mm X 6 Mm LTC7890 (graph 4) and 28 bring foot, 4 Mm X 5 Mm LTC7891 (graph 5) the representative application circuit of configuration.

Graph 4: The principle of representative application circuit of the LTC7890 of use ADI pursues. (origin: Analog Devices, inc. )

Graph 5: Use ADI 28 makes the plan of step-down manostat principle of crural LTC7891. (origin: Analog Devices, inc. )

Design personnel still can use tool of ADI report source control to combination achieves goal of power source function and optimize circuit board. This tool suit includes power of catenary of calculator of alterable step-down resistor, signal to configure implement develop an environment with what be based on Windows.

Epilogue

Nitrogen changes gallium is one kind changes semiconductor material of the gender, use at production to have high power density, super- quick switch speed and outstanding can the component of effect. Products plan personnel can use the product of driver of GaN FET grid of ADI, make a more reliable, more efficient system with fewer component, realize smaller systematic size and weight thereby.

Realize smaller systematic size and weight thereby.. Author: Pete Bartolik)

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