The outbreak of net of couplet of computation of big data, cloud, content lets memoryThe marketHot and unusual, The priceGo up again, from mobile phone, computer, car, to the toy, almost all electronProductEtc cannot leave memory, and can apparel especially, medical treatment, industryEquipmentMore the crucial data storage that cannot leave high-powered, tall wear and character of low power comsumption. Regard a system as crucial component, memory function is crucial. FaceThe marketGo up uneven memory, what is the direction of the choice? Future, the innovation of storage technology this from what does the respect do it?

In ICT of China of year of the 7th EEVIAMediaForum and 2018 industries and technology look into a seminar to go up, fuji connects an electron yuan parts of an apparatusProductThe strategy that runs ease of Feng of department inspector general to connect pair of blame newly to break sexual memory easily with respect to Fuji and innovation direction were done for everybody share. “FRAM (iron report memory) use at data logging; NRAM (carbolic accept rice provides storage) use at data logging and code to store, still can replace NOR Flash; ReRAM (resistor type recalls form) can replace high capacity EEPROM. ” before introducing Fuji to understand technology of 3 old storage in detail, feng Yi is new introduced their respective market to locate above all, the 3 storage technology hopeful that provide distinctive performance each greatly act part of a dark horse in market of product of of all kinds electron.

Besides the application such as net of couplet of watch plan, content, FRAM is extended in the round car and without batteries application

We are familiar with the 3 large dominant positions of FRAM very much — wear, tall literary sketch is entered, low power comsumption. What is wear? Feng Yi cited a case newly, writing frequency suppose is 1 second / second, if product life is 10 years, so wear is written to need 320 million times probably in 10 years. Very apparent, EEPROM and Flash cannot be satisfied.


The wear of FRAM excel EEPROM and Flash.

Of FRAM write speed to there is many tall? Write time of a data to tell, the speed of FRAM is the 1/3000 of EEPROM probably. That is to say, if a system uses advocate accuse to add a hard FRAM, when producing electricity, data is won’t missing. In what can advantage of collect so much apply at the FRAM of a suit respect? Feng Yi is new the FRAM that states Fuji is connected used intelligence already extensively net of couplet of watch plan system, content (IoT) , medical treatment electron is waited a moment. As product of car compasses FRAM roll out, at present FRAM has been entered in the round make in order to and car electron system without batteries, include fetal pressing to monitor, BMS is monitored, gasbag is waited a moment.

When producing electricity, the data of EEPROM, Flash and FRAM loses a case.

The car carries an electron to control a system the demand of data of of all kinds to accessing sensor increases continuously, because this is easy to tall efficiency blame the demand of technology of the memory that lose a sex is higher and higher also, because become,be other data processing when, ability of this kind of memory is quite only reliable and store without defer ground the data of sensor place collect. Because FRAM is belonged to,be not lose sexual memory, can have high speed random access not only, and have be able to bear or endure high keep spent character, because this can satisfy the requirement of this kind of application with first-rate function. Fuji was connected 2017 roll out memory of FRAM of step of two cars plan to solvePlan, can supportSafeGasbag data stores, accident data logger (EDR) , batteries management system (BMS) , the car drives support system (ADAS) the real time in reaching the application such as navigation and information entertainment system and persistent data stores, achieve thereby reduce a system complex the goal that spend and raises data integrality.

FRAM of car plan step is contented car electronDependabilityAnd choose without the optimal memory that asks tardily.

According to relevant report, to 2020, predicting whole world will have 50 billionEquipmentReceive Internet. “Fuji is connected what apply in the light of content couplet net is wireless the market demand that does not have batteries, research and development the low power comsumption of wireless power supplyEmbeddedRFID innovation sex is solvedPlan. This plan leave out the demand of RFID batteries power supply, leave out MCU, make product development cycle shorter, development is more easy, CostMore cheap. ” Feng ease new respecting. The RFID that is based on FRAM has the following characteristics:

One, anti-radiant quality, it is OK still that data issues in strong radiant illuminateSafeMemory;
2, low power comsumption and exterior power supply of yuan of parts of an apparatus, in not stabilized power supply perhaps does not need power source condition to fall, still can realize what Gao Ke leans to read write applied;
3, fast literacy, raise tag read write handling capacity to improve efficiency. Still have, high capacity can satisfy the memory of mass data, equal read write a distance to make application more convenient.

The advantage of FRAM technology combines RFID technology, the passive solution that we believe to Fuji is connected will be in the application of content couplet net have broad market.

Memory ” the Cenozoic Era ” NRAM, form with FRAM the market is complementary

“No matter be from read write the wear, rate that keeps or power comsumption to tell, FRAM compares traditional Flash, EEPROM to wait to have an advantage more, but at present FRAMCostTaller, consume kind of product commonly to still cannot be assumed. ” Feng Yi says newly when introducing NRAM. In the light of consume kind of market commonly, is Fuji connected with developed NRAM? The Nantero company of patent technology cooperates, the NRAM of technology of 55nm CMOS of joint research and development.

NRAM is one kind is based on CNT(Carbon, nanoTubes, rice of carbolic element accept is in charge of) blame is easy the RAM that lose a sex. BCC Research predicts, global NRAM market will achieve the long rate of compound the year’s harvest of 62.5% to 2023 from 2018 (CAGR) , among themEmbeddedSystematic market predicts to will reach 4.7 million dollar 2018, arrived to will grow 2023 to 217.6 million dollar, CAGR is as high as 115.3% .

Why can you have so big market? This should say from the 7 big character of NRAM case

1) tall speedread writes: Speed is adjacent at DRAM, 100 times faster than NAND Flash;
2) read high write wear: Of times above of over Flash1000 read keep a number;
3) tallDependability: Memory information can keep longer (1 chiliad can be amounted to when 85 ℃ , 10 years can be amounted to when 300 ℃ ) ;
4) low power comsumption: Bide one’s time the power comsumption when mode is almost 0;
5) wireless but expansibility: Will not produceCraftTechnical general under 5nm;
6) the affinity of as round as CMOS brilliant factory: Because have CNT onlyCraftCan put CMOS technology in, the element that exclusive need adds is carbon, the shortage that need not worry about material is polluted with the metal of the factory;
7) low cost: Current manufacturing cost is DRAM half about, as packing density rise, manufacturing cost will be lower and lower.

“NRAM not only it is OK also to can do data to store do a program to store, this one character is very charming to consuming kind of electron market. With respect to competitive pattern, NRAM maintains in high temperature operation, data, tall speedread is written go up to have an advantage more than traditional memory, prospective NRAM hopeful replaces high capacity EEPROM (capacity under 8Mb) He Xiaorong measures NOR Flash (the capacity is more than 16Mb) . ” when the prospective market that speaks of NRAM, feng Yi is new express.

Memory ” the Cenozoic Era ” ReRAM, shirt-sleeve DRAM is read write speed and SSD blame to be broken easily quality

ReRAM is a kind of new-style block changes the blame of type loses a sex easily random memory, pass to metallic oxideFilmyBring to bear on pulse voltage, the resistor with large generation differs a value to store ” 0 ” and ” 1 ” , DRAM read the blame that writes speed and SSD to break a gender easily to be united in wedlock at a suit, have lower power comsumption to reach at the same time faster read keep rate. According to Introduction Feng Yi new, the product of generation ReRAM that Fuji understands has been been by application in one partial Acousticon of European.

As different as FRAM, the norms of ReRAM more be similar to EEPROM, memory capacity is compared big, but size is smaller than EEPROM. What differ with EEPROM is, the applied dominant position with the largest ReRAM is low power comsumption, write easily.

1) write easily: Before keeping an operation, do not need erasure is operated
2) low power comsumption: Of 5MHz read drill to make the biggest electric current be 0.5mA only, far the EEPROM under similar requirement (3mA@5MHz) .

ReRAM regards memory forward position as the technology, future anticipates can replace current FlashRAM, and have cost the advantage with lower, more outstanding performance. Anticipate ReRAM high density is spent and the character of low power comsumption can make its are applied in great quantities in batteries power supply apparel the type equipment, medical treatment equipment such as Acousticon, and the equipment of content couplet network such as volume list and sensor.