IGBT module is by IGBT and FWD (chip of diode of follow on current) receive through specific circuit bridge what enclose and become is modular semiconductor product, have energy-saving, installation to maintain convenient, medicinal powder the characteristic such as hot stability.

 

 

IGBT is changeover of the sources of energy and transmission core parts of an apparatus, it is the “CPU of device of electric power electron”. Use IGBT to undertake power transformation, can improve the efficiency that use phone and quality, have efficient and energy-saving the characteristic with green environmental protection, it is to solve energy shortage problem and the key that reduce carbon to discharge to prop up a technology.

 

 

IGBT is it is dominant component with GTR, MOSFET is the amounts to Lin Du structure compound parts of an apparatus of drive component. Its are exterior have 3 electrode, it is G- grid respectively, c- collector, e- blasts off extremely.

 

 

In IGBT use process, can pass control its collect – shoot extremely voltage UCE and bar – shoot extremely the size of voltage UGE, come true to guide to IGBT thereby / close / the control that block breaks condition.

 

1) when IGBT bar – shoot extremely add add 0 or when negaive electricity is pressed, the raceway groove inside MOSFET disappears, IGBT is shown close position.

 

2) when collect – shoot extremely voltage UCE ＜ 0 when, the knot is in the PN of J3 to slant instead, IGBT shows retrorse block to decide position.

 

3) when collect – shoot extremely voltage UCE ＞ 0 when, divide kind of case:

 

② is like bar – shoot extremely Uth of voltage UGE ＜ , raceway groove cannot be formed, IGBT is shown deciding position to block.

 

② is like bar – shoot extremely Uth of voltage UGE ＞ , grid raceway groove is formed, IGBT shows on-state (regular job) . Right now, hole arrives from P+ area infuse N radical area undertakes conductance modulation, reduce the cost of RN of resistor of N radical area, make IGBT on-state is pressed fall reduce.

 

 

The technical difference of IGBT each for generations

 

Review the progress that power parts of an apparatus goes a few years, 1950-60 time ambipolar model SCR of parts of an apparatus, GTR, GTO, the product on-state resistance of this period of time is very little; Voltaic control, control circuit is complex and power comsumption is big; Took the place of 1970 VD-MOSFET of sheet pole parts of an apparatus. But the requirement that uses as terminal, need parts of an apparatus of a kind of new power to be able to satisfy at the same time: Drive circuit is simple, fall in order to reduce cost and switch power comsumption, on-state pressing inferior, in order to reduce the power comsumption of oneself of parts of an apparatus. Acting 1980 first, try a MOS and BJT technology are compositive the research that rise, brought about the invention of IGBT.

 

GE of around United States is successful 1985 trial-produce industry sample (abandon later regrettablly) . Henceforth, IGBT basically experienced 6 acting technologies and craft to improve.

 

Tell from the structure, IGBT basically has 3 development way:

 

1) IGBT fore-and-aft structure: Blame is transparent NPT of market cable division, the PT that takes resilient coating, NPT of division of transparent market cable end with FS electric field model;

 

2) IGBT grid structure: Groove of planar bar orgnaization, Trench structure;

 

3) silicon chip machines craft: Extension grows single crystal of silicon of frit of technology, area;

 

 

Its develop a tendency is: ① reduces loss ② to reduce manufacturing cost

 

Loss of on-state of ＝ of total power comsumption (concern with saturated voltage VCEsat) + switch loss (Eoff Eon) . Loss of the on-state in same acting technology and switch loss are both mutual contradiction, each other is growth and decline.

 

 

IGBT module is pressed enclose craft to look to basically can be divided to solder type and crimp type two kinds. High-pressured IGBT module solders with the standard commonly type is enclosed give priority to, low-pressure IGBT module appeared in a lot of new technologies, if agglomeration is replaced,solder, pressure contacts the crimp form that replaces down-lead bond to enclose craft.

 

As the ceaseless development of IGBT chip technology, the top job of chip writtens guarantee Wen Yugong leads density to rise ceaselessly, IGBT module technology also should suit to it. Technology of prospective IGBT module will solder around chip the reverse side fixed interrelate with openly electrode two respects are improved. Module technology develops a tendency:

 

● is not had solder, reach without down-lead bond without scaleboard / substrate encloses a technology;

Compositive temperature sensor, electric current sensor reachs ● interior the functional component such as drive circuit, the power density that increases IGBT module ceaselessly, compositive degree reach intelligence to spend.

 

 

The main application domain of IGBT

 

Regard the mainstream of new-style power semiconductor device as parts of an apparatus, IGBT applies extensively already at electron of communication of industry, 4C(, computer, consumption, car electron) , the traditional industry domain such as war industry of aerospace, national defence, and car of orbit traffic, new energy resources, intelligent electrified wire netting, new energy resources strategical burgeoning industry domain.

 

 

1) car of new energy resources

 

IGBT module is producing crucial effect in electric car, it is electric car is reached charge the core technology component of the equipment such as picket. IGBT module holds electric car cost near 10% , occupy charge picket cost is made an appointment with 20% . IGBT basically applies at the following respects in electric car domain:

 

A) dc of high-power of dynamoelectric control system / communicate (electric machinery of car of the drive after DC/AC) inversion;

 

B) the car carries air conditioning to control systematic small-power dc / communication (DC/AC) inversion, the IGBT with use lesser electric current and FRD;

 

C) charge picket intelligence charges module of the IGBT in picket is regarded as switch component to use;

 

 

2) intelligent electrified wire netting

 

IGBT applies extensively at intelligent electrified wire netting generate electricity end, transmit electricity end, change electric end reachs the end that use phone:

 

● from generate electricity in light of end, wind-force generates electricity, the commutator in Guang Fufa report and inverter need to use IGBT module.

● looks from transmit electricity end, special the FACTS in high-pressured dc transmit electricity is flexible need of transmit electricity technology uses the power parts of an apparatus such as IGBT in great quantities.

● from change in light of electric end, IGBT is transformer of electric power electron (PET) crucial parts of an apparatus.

● looks from the end that use phone, drive of illume of family expenses white report, microwave oven, LED have many demand to IGBT.

 

 

3) orbit traffic

 

IGBT parts of an apparatus already became drawing of orbit traffic car converter and the mainstream power electronic parts of all sorts of auxiliary convertor. Exchanging transmission technology is one of core technologies of modern course traffic, convertor of the drawing in communicating transmission system is crucial part, and IGBT is drawing convertor most one of parts of an apparatus of core.

 

 

Dimensions of IGBT domestic and international market

 

Dimensions of international IGBT market was 4.8 billion dollar about 2015, predict to 2020 market dimensions can reach 8 billion dollar, year compound increase rate is made an appointment with 10% . 2014 domestic IGBT sale is 8.87 billion yuan, the 1 ∕ that takes global market about 3. Predict dimensions of Chinese IGBT market will exceed 20 billion yuan 2020, year compound increase rate is about 15% .

 

From the point of the company, the company of parts of an apparatus of IGBT of foreign research and development basically has Ying Feiling, ABB, 3 water chestnut, Xi Menkang, Toshiba, Fuji to wait. Market of Chinese power semiconductor occupies the 50% above of world market, but be in in on high-end MOSFET and market of IGBT mainstream parts of an apparatus, 90 ％ basically count an import, basic by abroad monopoly of business of Euramerican, Japan.

 

 

The standards of product of IGBT parts of an apparatus that foreign enterprise is like the firm research and development such as Ying Feiling, ABB, 3 water chestnut covers voltage 600V-6500V, voltaic 2A-3600A, already formed perfect IGBT range of products.

 

Ying Feiling, 3 water chestnut, ABB presses the industrial IGBT domain of grade to take absolutely advantage in 1700V above report; In the high-pressured IGBT of grade of 3300V above voltage technical domain is in monopoly position almost. In respect of high-power groove technology, ying Feiling and company of 3 water chestnut are in international banner level.

 

The Xi Menkang, celestial being child consumptive IGBT domain in 1700V and grade of the following voltage is in advantage position.

 

 

Although our country has the biggest power semiconductor market, but at present big company look compares the research and development of product of domestic power semiconductor and international to still exist very big difference, especially the difference of high-end parts of an apparatus such as IGBT is more apparent. Core technology all masters in hand of developed country enterprise, IGBT technology is compositive spent tall characteristic to bring about higher market to be spent centrally again. Compare with domestic manufacturer photograph, the international manufacturer such as Ying Feiling, 3 water chestnut and Fuji electric machinery occupies absolutely market dominant position. The reason that forms this kind of situation basically is:

 

● international manufacturer starts early, investment of research and development is large, formed taller patent barrier.

Level of manufacturing industry of ● abroad high end wants than home a lot of taller, the technical dominant position of international manufacturer was supported on certain level.

 

 

The development of industry of Chinese power semiconductor must alter the aspect that at present the technology is in inferior position, want to obtain a breakthrough in level of industrial catenary upper reaches especially, the change is current domain of power parts of an apparatus is enclosed strong the current situation at chip.

 

As a whole, have in technical gap respect: The IGBT module specification that the field place such as electrified wire netting of Gao Tie, intelligence, new energy resources and high-pressured transducer adopts is in 6500V above, technical camp is stronger; IGBT chip design is made, module is enclosed, the technology of IGBT industry core such as invalidation analysis, test still masters in hand of developed country enterprise.

 

 

In last few years Chinese IGBT industry is driven in national policy reach get developing quickly below market drawing, already formed the chain of IGBT whole industry of IDM mode and acting industry pattern, IGBT is homebred the course that change is accelerated, hopeful casts off an entrance to depend on.

 

 

All sorts of profit such as electrified wire netting of traffic of car of new energy resources of benefit from benefit from, orbit, intelligence are good measure, IGBT market will be drawn erupt dot. Hope homebred IGBT industry can rise from which.