] recently, in the 2nd institute of Chinese company of group of electronic science and technology (division of abbreviation China cable 2)ProductionInside the building, 100 carborundum (SiC) single crystal growsEquipmentMoving in high speed, siC single crystal is in these 100EquipmentIn ” do all one can ” grow.

Li Bin of head of department of trade of 2 be related says Chinese cable division: “Single crystal of these 100 SiC grows equipment and powdery makings are us own research and development andProduction. We are very proud, we oneself can produce just right. “

SiC single crystal is material of the 3rd acting semiconductor, face bound puncture field width of peculiar big forbidden band, high with its the character such as conductance of mobility of strong, tall electron, high fever, make the high temperature that make, high frequency, high-power, good material that fights glow of irradiation, shortwave and photoelectricity collect to become parts of an apparatus, it is communication of new generation radar, satellite, high pressure is defeated become traffic of report, orbit, dynamoelectric the core material of the main field such as station of car, communication radical, have fundamental applied value and wide applied perspective.

Li Bin of head of department of trade of 2 be related says Chinese cable division: “High pure SiC pink makings is the crucial raw material that SiC single crystal grows, single crystal grows furnace is the core equipment that SiC single crystal grows, want to grow the SiC single crystal that gives high quality, in have high pure SiC pink makings and single crystal grow below furnace condition, still need to be oppositeManufacturing technologyUndertake designing, DebugAnd optimize. “

According to introducing, single crystal grows the requirement that furnace needs to achieve high temperature, high vacuum, nobleness to be spent completely, at present home can produce single crystal twice to grow only furnace, chinese cable division is 2 among them one of. They broke through the lukewarm field design that big diameter SiC grows, implementation can be used at single crystal of 150mm diameter SiC to grow rate of leakage of vacuum of furnace tall limit, low setting grows furnace designMakeReach small lot production; They still were broken through high pure the crucial technology such as the technology of foreign matter control in SiC pink makings, granuality control technology, brilliant control technology, the batch that the SiC pink that realized 99.9995% above purity expects is produced.