[introduction] the article introduced new-style 950V IGBT and diode technology. 950V IGBT structure is based on small groove concept, compare with photograph of typical 1200V technology, the static loss of new-style 950V IGBT and diode and / or switch loss is reduced significantly. Use the reciprocity of demand and power module design through the analysis, the applied outcome that the article determined power module and optimize method. Profit from is designed via optimized power module and use 950V technology, the near future rolls out realized develop of completely compositive 1500V ANPC to attack without substrate Easy3B solution structure. This develop attacks rated electric current of the structure achieves 400A, and stray inductance is low to only 15nH.

1. foreword

Promotion switch speed, enhance switch frequency and increasing power density is the development way with contemporary power at present main semiconductor device. Be in especially domain of inverter of smooth hot season, frequency of switch speed, switch and power density are 3 when improve inverter performance important lever. In the other application such as transducer, use specific limitation condition (for instance, use electric machinery and cable) restricted switch slope. Under photograph comparing, light does not have condition of switch speed limit in volt application. In application of smooth hot season, switch frequency is taller, switch rate is rapidder, amount of power filter component asks the likelihood is designed smallier. Accordingly, the most advanced switch parts of an apparatus in inverter of smooth hot season should satisfy the requirement with switch extremely small loss.

In the meantime, resemble using 3 n neutral to nod clamp bit-type (NPC) or active neutral nods clamp bit-type (ANPC) develop attacks structural inverter has been used at solar energy smooth hot season to apply widely. We can observe even, to improve systematic power density and efficiency, inverter uses 5 n or the more complex develop such as much n attacks structural trend is shown. The block of inverter of smooth hot season breaks tension and character, typical job voltage increases, this asks the block that increases switch cell decides capacity conversely. Although inverter of past 1100V smooth hot season is mainstream product, but the rated voltage of the current product on the market and the inverter of smooth hot season that are about to roll out all achieves 1500V. We will debate switch element mainly. Because 650V IGBT and diode undertake optimizing in the light of voltage of 1100V inverter generatrix, its block breaks ability to be able to ‘t satisfy the requirement of voltage of 1500V inverter generatrix. Can use only below this kind of circumstance without optimized 1200V IGBT and diode. Of course, the inverter of smooth hot season with higher price may use SiC MOSFET, but actually so far, the simple solution that employs Si-IGBT had be notted roll out on the market.

The article introduced new-style 950V IGBT and diode technology. We undertake new-style 950V technology and the most advanced 1200V parts of an apparatus comparative. The result makes clear, compare with photograph of 1200V parts of an apparatus, use new-style 950V parts of an apparatus to conduce to reduce trends considerably loss and / or improve static performance significantly. Next, the article is brief introduced ANPC develop to attack to be used of the structure further with research. Then, the article discussed power module design, layout and develop to attack the interaction between structural demand. Apparent, must use via optimized design, only such ability achieve best performance. Finally, the ANPC develop that the article introduced a kind to suit inverter of 1500V smooth hot season attacks structure, its are rated electric current is 400A. New the Easy3B module that roll out is completely compositive this develop attacks structure. Design of module of this low inductance power configured 950V parts of an apparatus, used via optimized design. In typical switch frequency (for instance 20kHz) below the condition, the output power of module of this low inductance power compares a level 25%-35% of tower above of technology of silicon radical 1200V.

2. applies to the new-style 950V technology that smooth hot season uses

Technology of new-style 950V IGBT is based on small groove (MPT) design. Well-known, 650V TRENCHSTOPTM 5 and 1200V TRENCHSTOP? 7 IGBT parts of an apparatus all used this design^{[1, 2, 3]}. ^[4]The principle that small groove design offerred in pursues, defined the characteristic of this design and optimize means. Because adopt alterable contact plan, development goes two independent parts of an apparatus that have different property: Sudden switch IGBT (S7) with the IGBT that optimizes static loss (L7) ) . Former static loss is in moderate level, but dynamic loss is reduced considerably; Loss of latter static state is inferior. New-style 950V diode is based on technology of existing 650V RAPID, have good soft spend and fight cosmic ray function reliably, and dynamic loss is inferior.

Graph the 1 trade-off curve that is 650V, 950V and 1200V MPT technology. All loss value that gives out in the graph all is to be in the knot is lukewarm (T_J) for voltage of 150 ° C, rated electric current and dc generatrix (V_DC) be equal to 2/3 block to break voltage V_CESmeasure below the condition. Can leave from inside the graph piece, 650V MPT IGBT can regard static loss as taller splitting switch parts of an apparatus (H5) and the parts of an apparatus that static loss optimizes (L5) . Compare with 1200V T4 photograph, 1200V MPT IGBT (T7) static loss is inferior, and dynamic loss is in moderate level. Because have 1200V block to decide capacity, the dynamic loss of T7 is 8 times of S5 almost, but both in rated electric current (I_Nom) the collector below – blast off extremely voltage is equal. Accordingly, 950V MPT technology narrowed gap of this one performance. The dynamic loss of L7 is made an appointment with higher than T7 almost 50% , but the static loss of L7 is apparent lower. 1/3 what the dynamic loss of S7 is T7 only, but the static loss of S7 is in moderate level.

Graph 1.650V, 950V and balance of technology of 1200V MPT IGBT compare a figure. The static loss that gives out in the graph and dynamic loss value all are in T_J=150 ° C and V_DC=2/3? V_CESMeasure below the condition. Additional, 650V and 1200V gave out in the graph the most advanced the loss value of parts of an apparatus of the 4th acting IGBT serves as reference.

What should notice is, current density increases as what block breaks tension and reduce. The current density of L7 and S7 is bigger than T7 50% the left and right sides. Accordingly, if power module is medium use chip area is same, the 1200V IGBT of function odds ratio of 950V IGBT is more apparent. Additional, undertake L7 and S7 and the most advanced 1200V T4 and 650V E4 comparative, the result indicates this performance advantage and use MPT concept and technology direct and relevant.

Next, we compare L7, S7 and T7 mainly. Graph 2 showed L7, S7 and T7 close to mix enlightened weaveform. When closing, the switch character of S7 is the strongest, namely switch slope (Dv/dt) the biggest and V of peak value voltage_{CE, peak}Highest. Notable is, as a result of grid driving unit inherent insulation ability is restricted, a lot of application suggest Dv/dt_MaxLimitation is in 25kV/ μ S. Will see S7 again, V_{CE, peak}Be close to respective maximum with Dv/dt, and exceeded afore-mentioned representative application be restricted to be worth. The performance of L7 and T7 is very weak, did not reach critical value. When debutting, the switch performance of all parts of an apparatus equallies matched. If grid resistor (R_G) reduce further, the switch loss of S7 is reduced, dv/dt value increases.

Graph 2. In V_DC=600V and T_JBelow condition of =25 ° C, when I_C=I_NomWith I_C=0.1? I_NomWhen, the Guan Duanbo form of L7, S7 and T7 (left) with enlightened weaveform (on the right side of) . Form includes characteristic parameter.

Graph the 3 dynamic loss the sum that showed L7, S7 and T7, open loss E leftly namely_ONAnd close loss E_OFF, and on the right side of the refreshment of 950V RAPID diode and 1200V EC7 loss the sum. Be in quite same chip undertakes below condition of rated electric current, namely I_Nom=400A and V_DC=750V. What showing loss is in collector electric current (I_C) with diode electric current (I_F) measure below the condition that is 175A. Uses R_GThe value is a basis afore-mentioned V_{CE, peak}With Dv/dt_MaxBe restricted to be worth derivation to reach.

Graph 3. When V_DC=750V and I_NomWhen =400A, IGBT (left) with diode (on the right side of) switch loss. To T7, the smallest R that when debut and closing, uses_GFor 1.8 Ω . Be restricted to be worth according to representative application, l7 uses R_{G, on}=9 Ω and R_{G, off}=3 Ω ; L7 uses R_{G, on}=12 Ω and R_{G, off}=17 Ω .

We will see IGBT loss. If collector electric current most greatly 175A, the dynamic loss of S7 compares T7 apparently slightly low. The circumstance of L7 differs somewhat: Without doubt, the dynamic loss of L7 is bigger, because L7 is,this is via parts of an apparatus of optimized loss of small static state. If I_C> 175A, in T_JBelow condition of =150 ° C, the dynamic loss of T7 under S7. However, what should notice is, the T7 of prep above of design current density of L7 and S7. If all parts of an apparatus are compared below same geometrical chip size, the circumstance can be changed somewhat. If collector electric current is 175A, t7 lowers the dynamic loss ratio of S7 20% , but the static loss of S7 compares T7 tall 100mV only. The dynamic loss of L7 is basic and changeless, but V_CEDrop again. When I_CWhen =175A, the static state of L7 is pressed fall lower than T7 300 MV.

To diode, the circumstance should be gotten simply much. To be clear about for the purpose of, 950V RAPID diode and 1200V EC7 diode part to move together with S7 and T7. The loss of 950V RAPID diode the loss under 1200V EC7. In addition, diode loss is far under IGBT loss, but this are not normally important in application of smooth hot season.

3.ANPC develop attacks structural research

In this section, we attack research ANPC develop the structure reachs his to design the interaction inside in power module. Graph the 4 typical ANPC develop that showed inverter of smooth hot season is used attack structure. 6 subsystem were used in the experiment, every subsystem by an IGBT (T1 comes T6) turn over shunt-wound diode with (D1 comes D6) composition. Mix to N from DC+ with symmetrical means bring to bear on to DC- from N V_DC. In subsystem 1 to subsystem 4 in, studies ANPC develop attacks the structure uses sudden switch parts of an apparatus; In the system 5 with subsystem 6 in, this ANPC develop attacks the structure uses parts of an apparatus of loss of small static state. Bibliographical reference^{[5, 6]}Comprehensive ground is discussed and explained ANPC develop to attack structure and change current way.

Graph 4. Subsystem 1 to subsystem 4 and subsystem 5 with subsystem 6 in, ANPC develop attacks the sketch map that the structure uses sudden switch parts of an apparatus and parts of an apparatus of loss of small static state respectively. Solid line and green dotted line express what what study to change current way.

Move in active power in, outputting for instance voltage and exporting electricity, graph 4 in solid line and green dotted line express to change current way typically. To be clear about for the purpose of, t1 and D2 are changed stream, and T5 is in liberal position continuously. Consequently, one when active power moves basically changes current way is to be in DC+ and N and / or between N and DC- . Accordingly, should reduce the parasitism inductance in these access through designing measure utmost, optimize function in order to ensure.

4.ANPC develop attacks structure

With the interaction that power module designs

Analytic ANPC develop attacks below structural function and the interaction that power module designs, if pursue,4 are shown. In this give typical examples, the largest block of all parts of an apparatus breaks voltage to be 650V. For love or money, the analysis all transfers block easily to break tension as a result taller (for instance 950V or 1200V) any other IGBT and diode technology.

This method analysed the switch character of T1 and D2. The article is total stray inductance the design of typical power module of 50nH and L_{σ , total}The classics of =30nH optimizes power module design to undertake comparative. To be clear about for the purpose of, set L_{σ , total}=L_{σ , setup}+ L_{σ , module}, among them L_{σ , setup}To install stray inductance, L_{σ , module}For module stray inductance. Be like [the place in 7] is narrated, stray inductance has distinct effect to function of parts of an apparatus. In this research, because be put in Δ L,main effect is_{σ , module}, because of L_{σ , setup}Did not produce marked change.

Unless have a specification additionally, this section is all measure all undertake below room temperature, namely T_J=25 ° C, V_DC=300V. Laboratory uses IGBT (S5) with diode (EC3) I_NomIt is 400A and 225A respectively.

Graph 5 showed I_CThe T1 when =150A and L_{σ , total}close weaveform. Use in two in the exemple, R_GIdentical, because the switch of this parts of an apparatus is characteristic similar. This shows, V_CEnotable difference and Δ L_{σ , module}Direct and relevant. However, if L_{σ , total}Inferior, the biggest V_CEFor 500V; If L_{σ , total}Taller, can bring about 640V overvoltage, the largest block that is close to parts of an apparatus breaks tension. In addition, taller L_{σ , total}With I_CWith V_CEGo up more apparent oscillation is relevant.

Graph 5. In T_J=25 ° C, V_DC=300V and I_CBelow =150A condition, t1 is in respectively L_{σ , total}=50nH (left) with L_{σ , total}=30nH (on the right side of) when close weaveform.

Graph 6 showed when L_{σ , total}=50nH and L_{σ , total}When =30nH, during IGBT closes V_{CE, peak}With R_GWith I_Crelation. L_{σ , total}, V_{CE, peak}Along with R_GReduce and increase, with L_{σ , total}With V_{CE, peak}Have nothing to do. If R_GLesser and I_C≥ 150A, can see V_{CE, peak}Increase not apparent. Because electric current jumps,this is change (Snap-off) oscillation is bigger and bigger to the influence of switch character. Accordingly, occurrence V_{CE, peak}the Di/dt move that the position decides by parts of an apparatus from inside involving a process jumps to electric current change area. If R_GBigger, t1 closes oneself no longer, and I_CWith V_{CE, peak}the relation also can be changed again. Can see apparently in the graph, if L_{σ , total}Bigger, V_{CE, peak}The value also is met taller. Accordingly, if did not optimize L_{σ , total}, reduce its namely the least value, must restrict I_C, R_GAnd / or V_DC, the largest block that parts of an apparatus exceeds in running a course in order to avoid decides capacity. Graph 7 in chart confirmed these analyse a result. Showed in the graph when I_C=200A (be equivalent to T1 I_Nom50% ) when, V_{CE, peak}With R_Grelation. When L_{σ , total}Taller and V_DCWhen =400V, R_GMust restrict 28 Ω ; If L_{σ , total}Inferior, do not have necessary set to should be restricted to be worth. In V_{CE, peak}Below the condition, t1 can be in R_GBe 10 Ω or move below lower even circumstance.

Graph 6. Coping: T_J=25 ° C and V_DCBelow =300V condition, when L_{σ , total}Taller (left) and inferior (on the right side of) when, during IGBT closes the peak value voltage of T1 and R_GWith I_Crelation. Bottom: T_J=25 ° C and V_DCBelow =300V condition, when L_{σ , total}Taller (left) and inferior (on the right side of) when, the Dv/dt of the D2 between diode convalescence_MaxWith R_GWith I_Frelation.

Graph 7. In T_J=25 ° C, V_DC=300V and 400V and I_CBelow =200A condition, when L_{σ , total}=50nH (left) with 30nH (on the right side of) when V_{CE, peak}With R_Grelation. Red line and orange line express V respectively_DC When =300V and 400V the biggest allow V_{CE, peak}. Illustration: Dv/dt_MaxWith R_Grelation. Red line states Dv/dt is 25kV/ μ S.

We will analyse switch slope. Graph 7 in illustration showed Dv/dt of slope of the biggest voltage_MaxWith R_Grelation. Hypothesis Dv/dt narrates 25kV/ μ S for above paragraphs place, L_{σ , total}Mix higher inferior when, during closing the smallest R_GAll restrict 13 Ω .

Consult the analysis to T1, the article also undertook similar analysis to D2. Graph 8 showed I_FWhen =10A, diode restores weaveform and L_{σ , total}relation. Same, speed of switch of the hypothesis in this analysis (namely DiF/dt) identical, because of this IF and V_FThe bigger oscillation that go up and L_{σ , total}the influence is direct and relevant. When electric current is lesser, diode switch speed is achieved the fastest. Accordingly, lv of the take an examination below these operating mode is pressed too and Dv/dt.

Graph 8. In T_J=25 ° C, V_DC=300V and I_FBelow =10A condition, when L_{σ , total}=50nH (left) with 30nH (on the right side of) when, the diode of D2 restores weaveform.

Graph 6 specifications when L_{σ , total}When =50nH and 30nH, the Dv/dt of D2_MaxWith R_GWith I_Frelation. Can see apparently, R_GWith I_FInferior when, dv/dt_MaxReach highest value. As R_GAnd / or I_FIncrease, dv/dt_MaxShow drab and degressive trend. Will see L again_{σ , total}, when L_{σ , total}Taller when, dv/dt_MaxIncrease apparently. Specific explanation is as follows: Below the circumstance of nonexistent parasitism inductance, because give the voltage slope that charge process keeps clear of below Di/dt condition and arises,diode design decided. The existence of parasitism inductance brings about inductive voltage to cause overlay to affect to switch slope. Especially to sudden switch diode, bigger Di/dt appears after restoring peak value, bring about extra voltage to increase. This increased gradient again conversely, thereby diode office appears taller Dv/dt_Max. What should notice is, this conclusion applies to diode only. To changing the IGBT in shedding route, because the symbol of inductive voltage is retrorse, dv/dt_MaxThe value is reduced.

Graph 9 showed R again_GWith the relation of Dv/dt, specific showed when I_F=I_CWhen =10A, dv/dt_MaxWith R_Grelation. This chart showed the Dv/dt that during diode restores reversely, D2 is in intuitionisticly_MaxAnd the Dv/dt that T2 is in during IGBT is enlightened_Max. When L_{σ , total}Taller and V_DCWhen =400V, R_GMust restrict 12 Ω ; If L_{σ , total}Inferior, do not have necessary set to should be restricted to be worth. This is meant, d2 and T1 can be in R_GBe 10 Ω or move below lower even circumstance. If above paragraphs place is narrated, when L_{σ , total}Taller when, the Dv/dt of diode_MaxWith the Dv/dt of IGBT_MaxApparent difference is bigger. Become only R_GWhen the value is more than 50 Ω , the Dv/dt of diode and IGBT_MaxThe value is similar. If L_{σ , total}Inferior, when R_GTo Dv/dt has been achieved when 30 Ω_Max. Graph the illustration of 9 showed I_F=10A and V_DCFall for 300V and 400V condition respectively, the peak value voltage of D2. Also can see during IGBT closes, when L_{σ , tota}Inferior when, V_{Diode, peak}Reduce. Although this one effect is very distinct, and V_{Diode, peak}Reduced hundred, R_Gthe choice does not accept this restriction. Accordingly, debut to restore with diode to IGBT, only Dv/dt_MaxRestrict and decide R_Gsize.

Graph 9. In T_J=25 ° C, V_DC=300V and 400V and I_F=I_CBelow =10A condition, when L_{σ , total}=50nH (left) with 30nH (on the right side of) when D2 (diode restores) with T1 (IGBT is enlightened) place Dv/dt_MaxWith R_Grelation. Red line states the biggest Dv/dt is 25kV/ μ S. Illustration: V_{Diode, peak}With R_Grelation.

We will sum up these to analyse a result: When L_{σ , total}Taller when, during IGBT closes V_{CE, peak}The cost is higher, and the Dv/dt between diode convalescence_MaxThe cost is higher. Accordingly, if choose typical power module to design (with taller L_{σ , total}Put in direct dependency) , must increase R during inverter moves_G, with avoiding parts of an apparatus is mixed / or grid driving unit suffers damage. Graph 10 intuitionistic ground showed these results. Showed via optimizing power module is designed in the graph (L_{σ , total}=30nH) design with typical power module (L_{σ , total}=50nH) in, IGBT loss (namely, E_OFF, E_ONWith E_RECThe sum) with I_CWith I_Frelation. As above, R_GTake a value to be as follows certainly: Via optimizing the R that power module designs_{G, on}=10 Ω , R_{G, off}=13 Ω ; The R that typical power module designs_{G, on}=12 Ω , R_{G, off}=28 Ω . Can see apparently, be designed via optimized power module through choosing and lower R_GValue, the switch loss of IGBT and diode is reduced considerably. To subsystem (namely the combination of IGBT and diode) for, loss can be reduced amount to 28% .

Graph 10. In T_JBelow =25 ° C and condition of 150 ° C, design via optimizing power module (L_{σ , total}=30nH) design with typical power module (L_{σ , total}=50nH) in the switch loss of T1 and D2 and I_CWith I_Frelation. Illustration: T_JWhen =150 ° C, because use,design via optimizing power module, the loss of IGBT and diode is reduced.

The place on put together is narrated, if main purpose is implementation optimum behavior, must use design via optimizing power module. The applicability via optimizing a design is stronger, support runs taller load current or raise switch rate through reducing RG. In this system, this conduces to increase flexibility, and can reduce systematic complexity, for instance, reduce passive component or amount of power source filter.

5. applies to inverter of 1500V smooth hot season

Optimize power module

According to the analysis of before one part and conclusion, want to realize optimum behavior in final system, must use design via optimized power module. For this, we develop the classics that applies to inverter of 1500V smooth hot season to optimize power module according to the following measure.

The first pace, affirmatory ANPC develop attacks of the structure basically change current way, if pursue,4 are shown.

The 2nd pace, in design of smooth andante wave guide, make position of power source terminal is stood by each other, reduce DC+ and N with utmost between and the stray inductance between N and DC- . DC+ , the position of N and DC- is shown 11 times like the graph. Output terminal setting is opposite input terminal, simplify thereby PCB design.

The 3rd pace, determine internal composition, make sure the key changes layer of the underlay on current route to exist only very small change regurgitate way. Avoid module existence changes current way between underlay.

The 4th pace, use new-style develop module of power of type of semmetry of extremely low inductance without substrate Easy3B solution. Accordingly, although this module area and two areas of module of traditional Easy2B power are same, its stray inductance is 15nH only. Additional, compare with Easy1B and Easy2B photograph, the hot impedance of Easy3B solution is reduced.

The 5th pace, compositive in this power module 950V IGBT and diode technology. Thereby, in the light of 1500V light volt inverter undertakes optimizing and the ANPC develop that rated electric current is 400A attacks the structure is finished compositive in individual power module.

The 1500V ANPC develop that use graph shows 4 times attacks the structure undertakes assessment to the function of this power module. T1 comes to T4 subsystem and T5 S7 and L7 are chosen respectively in T6 subsystem. The I of T2 and T3_NomFor 200A, the I of all and other IGBT_NomThe value is 400A. To diode, the article analysed setting of two kinds of main application: In a kind of setting, all subsystem all diode of compositive 200A RAPID; In the 2nd kind of setting, use I_NomDiode of Xiao Te radical replaces the 1200V SiC of =60A RAPID diode D2 and D3. In the meantime, attack the ANPC develop that combines T7 and EC7 the structure is designed as reference, change current route to undertake comparative to active power. Be in all using in the exemple, assume average module temperature increases 30K at most, this restricted the applicability of this solution.

Graph 11.Easy3B solution, contain be based on 950V ANPC develop to attack structural correspondence brings crural allocation.

Pursue 12 showed when 1200V voltage brings to bear on between DC+ and DC- terminal, I of electric current of the biggest output_OutWith switch frequency F_SWrelation. Solid line shows reference design and two afore-mentioned I that are based on L7/S7 setting_Out. The rated electric current of 3 kinds of solutions is identical. When F_SWExtremely low when, the I of T7/EC7 solution_OutTaller than solution of two kinds of L7/S7 most 15% . When F_SWFor the typical cost of prep above 20kHz, former I_OutTaller than latter 7% the left and right sides. Be worth what carry is, when the power density when T7/EC7 solution is apparently only inferior, ability can realize afore-mentioned I_OutAdvantage. If power density is identical, namely the chip area of L7, S7 and RAPID diode is same, the circumstance can be changed. The dotted line in the graph showed this intuitionisticly. Can see apparently, the L7/S7 solution that configures RAPID diode and the L7/S7 solution that configure SiC diode realized I respectively_OutIncrease be as high as 40% with 75% . Even when F_SWWhen be in 0-40kHz limits, I_OutTower above of more referenced than T7/EC7 also design is least 10% , most 26% . These research do not make a person accident as a result, because T7 and EC7 were aimed at general transducer to undertake optimizing, switch frequency is consequently lower. Accordingly, if smooth hot season applies a requirement to raise switch rate, so the advantage of L7 and S7 can be shown.

Graph 12 in illustration showed those who achieve correspondence the biggest I_OutWhen, systematic efficiency and F_SWrelation. The systematic efficiency of all solutions was achieved at least 99.2% . The systematic efficiency of L7/S7 solution compares the solution tower above that is based on T7 from beginning to end least 0.05% , most 0.3% . What should notice is, with I_Nom=400A (solid line) L7/S7 solution photograph is compared, the L7/S7 solution with chip larger size (dotted line) systematic efficiency slightly low, but I_OutApparent taller. Although systematic efficiency slightly low, but when F_SWWhen =20kHz, I_OutRose 25% to 35% .

Graph 12. Below same hot attrib border condition, the I when different solution and power density are different_OutWith F_SWrelation. Illustration: In corresponding I_OutBelow the condition, efficiency of the system when different solution and power density are different and F_SWrelation.

6. brief summary

The article introduced new-style 950V IGBT and diode to reach its inherent design program, had its and existing 1200V technology comparative. Already the IGBT that some small groove designs support development to optimize static loss (L7) with sudden switch IGBT (S7) . Compare with the most advanced 1200V IGBT photograph, the static loss of new-style 950V technology is reduced significantly, switch function rises significantly, and came true more actor system performance.

Through be opposite power module design and ANPC develop attack the integration analysis of structural interaction, the article decided the key changes current route and systematic limitation element. The analysis makes clear as a result, via optimized power module the design reduced total stray inductance significantly, simplified further thereby switch operation, make loss is reduced considerably amount to 28% .

Be based on design via optimized power module, the develop of completely compositive ANPC that we put forward rated electric current to be 400A attacks structure, apply to inverter of 1500V smooth hot season. New the Easy3B solution that roll out used this ANPC structure, make module stray inductance low to only 15nH. Union of design of module of this kind of power is new the 950V IGBT that roll out offerred two kinds of scheme for selection for inverter of smooth hot season. On one hand, if change given 1200V IGBT, can be in reduce the implementation is same output power while core is accumulated one-sidedly considerably. On the other hand, if use same chip area, output electric current to be able to increase 25% to 75% .

Bibliographical reference

^[1] T. Kimmer And E. Griebl, “Trenchstop 5: A New Application Specific IGBT Series ” , proc. PCIM Europe, pp. 120-127, 2012.

^[2] F. Wolter Et Al. , “Multi-dimensional Trade-off Considerations Of The 750 V Micro Pattern Trench IGBT For Electric Drive Train Applications ” , proc. ISPSD, pp. 105-108, 2015.

^[3] C. Jaeger Et Al. , “A New Sub-micron Trench Cell Concept In Ultrathin Wafer Technology For Next Generation 1200 V IGBTs ” , proc. ISPSD, pp. 69- 72, 2017.

^[4] C. R. M ü Ller Et Al. , “New 1200 V IGBT And Diode Technology With Improved Controllability For Superior Performance In Drives Application ” , proc. PCIM Europe, pp. 289-296, 2018.

^[5] D. Floricau Et Al. , “The Efficiency Of Three-level Active NPC Converter For Different PWM Strategies” , proc. EPE, pp. 1-9, 2009.

^[6] A. C. Schittler Et Al. , “Interaction Of Power Module Design And Modulation Scheme For Active Neutral Point Clamped Inverters ” , proc. PCIM Europe, pp. Tbd. , 2019.

^[7] C. R. M ü Ller Et Al. , “Using 650V High Speed 3 IGBTs In Power Modules For Solar Inverter Performance Improvement ” , proc.  

Origin: Infineon

Avoid duty statement: The article is reprint an article, reprint this article purpose to depend on passing more information, the person that copyright puts in original work ‘s charge is all. If involve work copyright issue,article place uses video, picture, written language, contact please small make up undertake handling.