[introduction] manufacturer of numerous terminal product chooses to use SiC technology to replace silicon radical craft in succession, will develop be based on ambipolar knot transistor (BJT) , transistor of effect of knot bar field (JFET) , metallic oxide semiconductor field effect transistor (MOSFET) with insulation bar ambipolar transistor (IGBT) power source product. However, the SiC of Qorvo research and development ” in all source in all bar structure ” FET parts of an apparatus (if the graph is shown 2 times) make this technology further. These parts of an apparatus are based on distinctive ” in all source in all bar structure ” circuit configuration, will one often leaves model SiC JFET parts of an apparatus and MOSFET of a silicon radical are enclosed jointly, form compositive often close model SiC FET parts of an apparatus. Be in next in paragraph, the SiC FET that we will elaborate Qorvo research and development in detail (in all source in all bar structure FET) relatively the distinct advantage at congener SiC MOSFET.

In before a problem is ” power electronic parts from silicon (Si) to carborundum (SiC) transfer ” Bo Wenzhong, we discussed carborundum (SiC) how to make power electron market ” overturn industry modes of life and relation to their environment ” technology. If the graph is shown 1 times, with silicon (Si) data phase is compared, siC has advantage of a lot of technology, we are not accordingly fathomless why it already made electric car (EV) , data center and solar energy / the first selection technology that favour can get fully in a lot of application domains such as second birth the sources of energy.

Graph 1. The contrast of silicon and carborundum

Manufacturer of numerous terminal product chooses to use SiC technology to replace silicon radical craft in succession, will develop be based on ambipolar knot transistor (BJT) , transistor of effect of knot bar field (JFET) , metallic oxide semiconductor field effect transistor (MOSFET) with insulation bar ambipolar transistor (IGBT) power source product. However, the SiC of Qorvo research and development ” in all source in all bar structure ” FET parts of an apparatus (if the graph is shown 2 times) make this technology further. These parts of an apparatus are based on distinctive ” in all source in all bar structure ” circuit configuration, will one often leaves model SiC JFET parts of an apparatus and MOSFET of a silicon radical are enclosed jointly, form compositive often close model SiC FET parts of an apparatus. Be in next in paragraph, the SiC FET that we will elaborate Qorvo research and development in detail (in all source in all bar structure FET) relatively the distinct advantage at congener SiC MOSFET.

Graph 2.Qorvo SiC FET (” in all source in all bar structure ” FET) block diagram of structure of parts of an apparatus

With photograph of silicon radical parts of an apparatus is compared, use SiC to be able to gain what advantage

SiC MOSFET or SiC FET and silicon base than having a few appearance of parts of an apparatus is prominent advantage. Above all, siC regards a kind of broadband as unoccupied place material, have taller puncture voltage, can use thinner parts of an apparatus to support taller voltage consequently. Besides, siC photograph relatively parts of an apparatus of Yu Gui radical still has the following advantage:

• To given voltage and resistor grade, siC can realize taller working frequency, because this can reduce the volume of passive parts of an apparatus, reduce the dimension of whole system and cost thereby

• To higher voltage order and degree (1200V or taller) , siC can realize high frequency switch with inferior power loss; And in what still can be competent below such voltage grade silicon radical parts of an apparatus exists scarcely actually

• Be in any given in enclosing, siC is opposite silicon radical product is had lower guide electrify block and switch loss

• In as identical as silicon parts of an apparatus design, siC can let a client obtain taller efficiency, more outstanding medicinal powder hot property, with higher systematic rated power

These advantages reflect the function in Qorvo SiC FET to go up likewise. Update as a kind and the parts of an apparatus with more powerful function, qorvo SiC FET undertook optimizing in the light of a variety of power application, brought the following and additional profit:

• The framework of Qorvo SiC FET introduces drive of standard silicon grid, this makes arrive from silicon the transition of SiC is more smooth, also provided bigger flexibility for stylist at the same time

• In give in enclosing, the leakage that has industry minimum – the source guides electrify block RDS(ON) , but the oldest rate promotes a system efficiency

• Smaller electric capacity permits rapidder switch rate, realize taller working frequency then; This reduced the inductor and capacitor size that accumulates passive component roughly further

• With photograph of silicon radical IGBT is compared, siC FET is in taller voltage grade (1200V or taller) can realize taller working frequency. Although silicon radical IGBT serves on the tradition at market of this one fractionize, but rate is normally slower, use below inferior frequency only, switch loss is accordingly higher

• Parts of an apparatus of Qorvo SiC FET can be obtained below the condition that gives RDS(ON) smaller naked a dimension, ease the problem of grid oxide dependability with SiC MOSFET common product

SiC MOSFET Vs. Qorvo SiC FET: Development is comparative

Let our take a moment understand SiC MOSFET and Qorvo SiC FET deep more the difference between technology of two kinds of power. From the graph below 3 in, the compositive SiC FET that we can discover to SiC MOSFET technology is different from Qorvo — the result that this is elaborate design. Qorvo used SiC JFET to eliminate the grid oxidation layer of SiC MOSFET, eliminated raceway groove resistor then, let naked a dimension is more compact.

Qorvo SiC JFET is lesser naked a key that becomes its to need dissimilation advantage is in a dimension, pass what the graph shows 4 times ‘ RDS(ON) X A ‘ (RdsA) quality factor (FOM) get optimal reflect. This is meant to given chip dimension, qorvo SiC FET was offerred lower guide electrify block rating; Change character, below same RDS(ON) condition, the SiC that place of Qorvo SiC FET needs is naked a size is smaller. Qorvo established an industry by right of the outstanding performance in RdsA FOM respect lead position; What its offer exceed product of low rated resistance the relatively lesser occupation standard such as can applicable TOLL and D2PAK is enclosed, let this be able to show adequately.

The comparison of graph 3.SiC MOSFET and Qorvo SiC FET

Photograph comparing of the SiC FET of Qorvo and SiC MOSFET has Coss of lower output electric capacity. The parts of an apparatus with output inferior electric capacity leaves switch rate in small load current faster, capacitance charges defer time is shorter. This is meant, because decreased to wait to accumulate the demand of passive component more roughly to inductor and capacitor, make terminal unit can realize minorrer volume, lighter weight, lower cost, obtain higher power density.

Graph 4.Qorvo SiC FET and SiC MOSFET contest taste contrast

SiC MOSFET still faces challenge of the following technology:

• Resistor of SiC MOS raceway groove is tall, bring about electronic mobility inferior

• In grid bias voltage higher case falls, vth may produce drift; This restricted grid to arrive the voltage drive limits of source pole

• Body diode has taller inflection point voltage, because this needs synchronous commutate

However, after using Qorvo SiC FET, afore-mentioned blemish are able to solve at all, the reason is as follows:

• The slam the door on the parts of an apparatus of SiC JFET structure MOS (metallic oxide) structure, parts of an apparatus is more accordingly reliable

• Below same chip area, leakage pole comes source pole resistance is lower

• Electric capacity is smaller, be equivalent to faster switch changeover and taller frequency

Main conclusion

The sort of SiC power semiconductor that although can be offerred on the market,chooses is various, but in certain and specific applying, the expression of a few parts of an apparatus compares other parts of an apparatus really more outstanding. The compositive SiC of Qorvo ” in all source in all bar structure ” FET technology is the among them person that above average; Its depend on electric capacity of low RDS(ON) , low output, provided outstanding performance with the distinct advantage such as high reliability. The SiC FET technology that these quality factor promote Qorvo is in other technology cannot the domain that look forward to reachs shines brilliantly. In addition, the add function of SiC FET makes its are in unit of AC/DC power source, DC/DC store can mix but application of second birth the sources of energy, and electric car achieves taller efficiency in fast charger.

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